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1. (WO2018182731) STEEP SUBTHRESHOLD SLOPE VERTICAL FET USING THRESHOLD SWITCHING MATERIAL

Pub. No.:    WO/2018/182731    International Application No.:    PCT/US2017/025552
Publication Date: Fri Oct 05 01:59:59 CEST 2018 International Filing Date: Sat Apr 01 01:59:59 CEST 2017
IPC: H01L 29/78
H01L 27/108
H01L 29/66
Applicants: INTEL CORPORATION
Inventors: SHARMA, Abhishek A.
PILLARISETTY, Ravi
LE, Van H.
DEWEY, Gilbert
Title: STEEP SUBTHRESHOLD SLOPE VERTICAL FET USING THRESHOLD SWITCHING MATERIAL
Abstract:
A transistor apparatus including a transistor body disposed on a substrate, the body including a first diffusion region and a second diffusion region on the first diffusion region, wherein the first diffusion region and the second diffusion region are separated by a channel; a threshold switching material (TSM) coupled to one of the first diffusion region and the second diffusion region; and a gate stack including a gate electrode and a gate dielectric material. A method of forming an integrated circuit including forming a plurality of bodies in a row on a substrate, each of the plurality of bodies including a transistor including a first diffusion region, a second diffusion region and a channel, wherein the second diffusion region is on the first diffusion region and separated by the channel; and forming a threshold switching material (TSM) in contact with the second diffusion region.