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1. (WO2018182698) PERPENDICULAR SPIN TRANSFER TORQUE MEMORY (PSTTM) DEVICES WITH ENHANCED THERMAL STABILITY AND METHODS TO FORM THE SAME

Pub. No.:    WO/2018/182698    International Application No.:    PCT/US2017/025438
Publication Date: Fri Oct 05 01:59:59 CEST 2018 International Filing Date: Sat Apr 01 01:59:59 CEST 2017
IPC: H01L 43/02
H01L 43/08
H01L 43/10
H01L 43/12
Applicants: INTEL CORPORATION
Inventors: RAHMAN, Tofizur
WIEGAND, Christopher J.
OUELLETTE, Daniel G.
SMITH, Angeline K.
BROCKMAN, Justin S.
OGUZ, Kaan
O'BRIEN, Kevin P.
DOCZY, Mark L.
DOYLE, Brian S.
GOLONZKA, Oleg
GHANI, Tahir
Title: PERPENDICULAR SPIN TRANSFER TORQUE MEMORY (PSTTM) DEVICES WITH ENHANCED THERMAL STABILITY AND METHODS TO FORM THE SAME
Abstract:
A material layer stack for a pSTTM device includes a magnetic tunnel junction (MTJ) having a fixed magnetic layer, a tunnel barrier disposed above the fixed magnetic layer and a free magnetic layer disposed on the tunnel barrier. An oxide layer is disposed on the free magnetic layer and a follower magnetic layer is disposed on the oxide layer, wherein the magnetic layer is magnetically coupled to the free magnetic layer.