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|1. (WO2018182689) VERTICAL SHARED GATE THIN-FILM TRANSISTOR-BASED CHARGE STORAGE MEMORY|
|Inventors:||SHARMA, Abhishek Anil
LE, Van H.
DEWEY, Gilbert William
KAVALIEROS, Jack T.
|Title:||VERTICAL SHARED GATE THIN-FILM TRANSISTOR-BASED CHARGE STORAGE MEMORY|
A charge storage memory is described based on a vertical shared gate thin-film transistor. In one example, a memory cell structure includes a capacitor to store a charge, the state of the charge representing a stored value, and an access transistor having a drain coupled to a bit line to read the capacitor state, a vertical gate coupled to a word line to write the capacitor state, and a drain coupled to the capacitor to charge the capacitor from the drain through the gate, wherein the gate extends from the word line through metal layers of an integrated circuit.