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1. (WO2018182678) THERMALLY RESISTIVE CAPPING LAYERS IN A RESISTIVE SWITCH DEVICE

Pub. No.:    WO/2018/182678    International Application No.:    PCT/US2017/025338
Publication Date: Fri Oct 05 01:59:59 CEST 2018 International Filing Date: Sat Apr 01 01:59:59 CEST 2017
IPC: H01L 45/00
Applicants: INTEL CORPORATION
Inventors: SHARMA, Abhishek A.
PILLARISETTY, Ravi
LE, Van H.
DEWEY, Gilbert
SHIVARAMAN, Shriram
Title: THERMALLY RESISTIVE CAPPING LAYERS IN A RESISTIVE SWITCH DEVICE
Abstract:
Resistive switch devices including a thermal layer and processes for forming the devices are provided. The thermal layer can be thermally resistive layer and electrically insulating. As such, the thermal layer can be arranged to cap or otherwise encapsulate a resistive switch element including an oxygen exchange layer and an oxide layer that can be caused to transition between a low-resistance state and a high-resistance state via the application of a defined voltage across the resistive switch device. In the low-resistance state a current can be transported across the resistive switch device, which current can cause the thermal layer to confine heat within the resistive switch element. The confined heat can increase the temperature of the resistive switch device, thus lowering a voltage to be applied in order to cause the resistive switch device to transition to the high-resistance state.