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1. (WO2018182669) SPIN ORBIT COUPLING SHIFT REGISTER MEMORY DEVICE

Pub. No.:    WO/2018/182669    International Application No.:    PCT/US2017/025261
Publication Date: Fri Oct 05 01:59:59 CEST 2018 International Filing Date: Sat Apr 01 01:59:59 CEST 2017
IPC: G11C 19/18
G11C 11/16
Applicants: INTEL CORPORATION
Inventors: MANIPATRUNI, Sasikanth
NIKONOV, Dmitri E.
YOUNG, Ian A.
Title: SPIN ORBIT COUPLING SHIFT REGISTER MEMORY DEVICE
Abstract:
Techniques are disclosed for forming and using a "racetrack memory" (also referred to as a "shift register") that reads and writes data to magnetic domains within a ferromagnetic conductor using the Rashba Bychkov ("RB") effect. The RB effect enables strong electron spin polarization ("spin-orbit coupling") in an "out of plane" direction - that is, in a direction perpendicular to an interface between the ferromagnetic conductor and an RB conductor. With this out of plane polarization, the RB effect can more efficiently (e.g., with a lower current) and more read and write data to domains in the shift register.