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1. (WO2018182663) SPINTRONIC MEMORY WITH METAL OXIDE CAP LAYER
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/182663 International Application No.: PCT/US2017/025247
Publication Date: 04.10.2018 International Filing Date: 31.03.2017
IPC:
H01L 43/02 (2006.01) ,H01L 43/10 (2006.01) ,H01L 43/08 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
02
Details
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
10
Selection of materials
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
08
Magnetic-field-controlled resistors
Applicants: INTEL CORPORATION[US/US]; 2200 Mission College Boulevard Santa Clara, California 95054, US
Inventors: RAHMAN, MD Tofizur; US
WIEGAND, Christopher J.; US
OUELLETTE, Daniel G.; US
SMITH, Angeline K.; US
DOCZY, Mark L.; US
OGUZ, Kaan; US
O'BRIEN, Kevin P.; US
DOYLE, Brian S.; US
GOLONZKA, Oleg; US
GHANI, Tahir; US
Agent: RICHARDS, Edwin E.; US
TROP, Timothy N.; US
ROZMAN, Mark J.; US
GARZA, John C.; US
PRUNER JR., Fred G.; US
RIFAI, D'Ann Naylor; US
Priority Data:
Title (EN) SPINTRONIC MEMORY WITH METAL OXIDE CAP LAYER
(FR) MÉMOIRE SPINTRONIQUE AVEC COUCHE DE COUVERTURE À OXYDE MÉTALLIQUE
Abstract:
(EN) An embodiment includes an apparatus comprising: a magnetic tunnel junction (MTJ) including a free magnetic layer, a fixed magnetic layer, and a tunnel barrier layer between the free and fixed magnetic layers; and an oxide layer, directly contacting the free magnetic layer, comprising a member selected from the group consisting of niobium, molybdenum, tantalum, tungsten, rhenium, titanium, vanadium, chromium, zirconium, hafnium, ruthenium, rhodium, osmium, iridium, or combinations thereof. Other embodiments are described herein.
(FR) Selon un mode de réalisation, cette invention concerne un appareil comprenant : une jonction tunnel magnétique (MTJ) comprenant une couche magnétique libre, une couche magnétique fixe, et une couche barrière tunnel entre les couches magnétiques libre et fixe; et une couche d'oxyde, en contact direct avec la couche magnétique libre, comprenant un élément choisi dans le groupe constitué par le niobium, le molybdène, le tantale, le tungstène, le rhénium, le titane, le vanadium, le chrome, le zirconium, le hafnium, le ruthénium, le rhodium, l'osmium, l'iridium ou des combinaisons de ceux-ci. L'invention comprend en outre d'autres modes de réalisation.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)