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1. (WO2018182649) LAYERED OXYGEN BARRIER ELECTRODES FOR RESISTIVE RANDOM ACCESS MEMORY (RRAM) DEVICES AND THEIR METHODS OF FABRICATION

Pub. No.:    WO/2018/182649    International Application No.:    PCT/US2017/025184
Publication Date: Fri Oct 05 01:59:59 CEST 2018 International Filing Date: Fri Mar 31 01:59:59 CEST 2017
IPC: H01L 45/00
Applicants: INTEL CORPORATION
KARPOV, Elijah V.
JEZEWSKI, Christopher J.
KOBRINSKY, Mauro J.
Inventors: KARPOV, Elijah V.
JEZEWSKI, Christopher J.
KOBRINSKY, Mauro J.
Title: LAYERED OXYGEN BARRIER ELECTRODES FOR RESISTIVE RANDOM ACCESS MEMORY (RRAM) DEVICES AND THEIR METHODS OF FABRICATION
Abstract:
A resistive random access memory (RRAM) device includes a bottom electrode disposed above a substrate, a top electrode disposed above the bottom electrode, an oxygen exchange layer disposed between the bottom electrode and the top electrode and a switching layer disposed between the bottom electrode and the top electrode. In an embodiment, the bottom or the top electrode includes at least two conductive layers, a first conductive layer and a second conductive layer disposed on the first conductive layer, where the first conductive layer has grain boundaries that are offset from grain boundaries of the second conductive layer.