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|1. (WO2018182619) CO-INTEGRATING COMPOSITIONALLY DIFFERENT SEMICONDUCTOR MATERIALS USING A COMMON THIN SEED LAYER|
LE, Van H.
METZ, Matthew V.
SUNG, Seung Hoon
|Title:||CO-INTEGRATING COMPOSITIONALLY DIFFERENT SEMICONDUCTOR MATERIALS USING A COMMON THIN SEED LAYER|
Techniques are disclosed for monolithically co-integrating compositionally different semiconductor materials using a common thin monocrystalline semiconductor seed layer. In some embodiments, the shared seed layer allows for the overlying compositionally different monocrystalline semiconductor materials to be formed in a defect free or substantially defect free manner. This occurs because the seed layer is sufficiently thin such that it can allow itself to be strained by the growth of overlying monocrystalline semiconductor fin structures, which is referred to as strain transfer or compliant effect. As a result, misfit dislocations that would otherwise form in the overlying monocrystalline semiconductor material of the fins formed on the seed layer may not form at all (or may form at a lower rate/quantity), enabling the monocrystalline semiconductor material fins to be formed in an enhanced quality manner. Non-planar transistor architectures such as FinFET and gate-all-around can be formed using the fins.