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1. (WO2018182607) THERMALLY CONDUCTIVE DIELECTRIC LAYERS FOR THIN FILM TRANSISTORS
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/182607 International Application No.: PCT/US2017/024963
Publication Date: 04.10.2018 International Filing Date: 30.03.2017
IPC:
H01L 29/786 (2006.01) ,H01L 29/49 (2006.01) ,H01L 27/12 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40
Electrodes
43
characterised by the materials of which they are formed
49
Metal-insulator semiconductor electrodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12
the substrate being other than a semiconductor body, e.g. an insulating body
Applicants: INTEL CORPORATION[US/US]; 2200 Mission College Blvd. Santa Clara, CA 95054, US
Inventors: SHARMA, Abhishek A.; US
LE, Van H.; US
DEWEY, Gilbert; US
PILLARISETTY, Ravi; US
SHIVARAMAN, Shriram; US
Agent: HOWARD, James M.; US
Priority Data:
Title (EN) THERMALLY CONDUCTIVE DIELECTRIC LAYERS FOR THIN FILM TRANSISTORS
(FR) COUCHES DIÉLECTRIQUES THERMOCONDUCTRICES POUR TRANSISTORS À COUCHES MINCES
Abstract:
(EN) Thermally conductive dielectric layers for thermal management of thin film transistors (TFTs). TFTs fabricated in a backend-of-line (BEOL) may experience high operating temperatures increasing leakage current within the thin film semiconductor material. Dielectric materials that provide electrical device isolation while offering enhanced thermal conductivity may reduce thermal excursions during TFT operation. In some embodiments, thermally conductive layers having a Debye temperature close to that of the channel semiconductor are in placed in close proximity with the channel semiconductor, improving local heat flux away from the channel and/or spreading heat generated by the TFT. In some embodiments, a thermally conductive dielectric layer is near a surface a thin film select transistor of a memory device.
(FR) L'invention concerne des couches diélectriques thermoconductrices destinées à la gestion thermique de transistors en couches minces (TCM). Des TCM fabriqués dans un circuit intégré (Back end of line) peuvent subir des températures de fonctionnement élevées, qui augmentent le courant de fuite à l'intérieur du matériau semi-conducteur en film mince. Des matériaux diélectriques qui fournissent un isolement de dispositif électrique tout en offrant une conductivité thermique améliorée peuvent réduire les excursions thermiques pendant le fonctionnement du TCM. Dans certains modes de réalisation, des couches thermoconductrices ayant une température de Debye proche de celle du semi-conducteur de canal sont placées à proximité immédiate du semi-conducteur de canal, pour améliorer le flux de chaleur local d'éloignement du canal et/ou propager la chaleur produite par le TCM. Dans certains modes de réalisation, une couche diélectrique thermoconductrice est proche d'une surface d'un transistor choisi en film mince d'un dispositif de mémoire.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)