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1. (WO2018181891) PHASE SHIFT MASK BLANK, PHASE SHIFT MASK AND MANUFACTURING METHOD FOR PHASE SHIFT MASK

Pub. No.:    WO/2018/181891    International Application No.:    PCT/JP2018/013591
Publication Date: Fri Oct 05 01:59:59 CEST 2018 International Filing Date: Sat Mar 31 01:59:59 CEST 2018
IPC: G03F 1/32
G03F 1/58
G03F 1/72
H01L 21/3065
Applicants: TOPPAN PRINTING CO.,LTD.
凸版印刷株式会社
Inventors: KOJIMA, Yosuke
小嶋 洋介
Title: PHASE SHIFT MASK BLANK, PHASE SHIFT MASK AND MANUFACTURING METHOD FOR PHASE SHIFT MASK
Abstract:
The purpose of the present invention is to obtain a phase shift mask with an improved size, wherein an undercut does not occur in a lower layer light-blocking film when the phase shift mask is fabricated. This phase shift mask blank is formed by stacking, on a substrate transparent to an exposure wavelength, a phase shift film having resistance to oxygen-containing chlorine-based etching (Cl/O system) and non-oxygen containing chlorine-based etching (Cl system), and capable of being etched by fluorine-based etching (F system), a light-blocking film having resistance to oxygen-containing chlorine-based etching (Cl/O system), and capable of being etched by non-oxygen containing chlorine-based etching (Cl system), and an etching mask film having resistance to fluorine-based etching (F system) and non-oxygen containing chlorine-based etching (Cl system), and capable of being etched by oxygen-containing chlorine-based etching (Cl/O system), and does not have an etching stopper layer between the phase shift film and the substrate.