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1. (WO2018181788) METHOD FOR EVALUATING QUALITY OF SiC SINGLE CRYSTAL, AND METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL INGOT UTILIZING SAID METHOD
Latest bibliographic data on file with the International BureauSubmit observation

Pub. No.: WO/2018/181788 International Application No.: PCT/JP2018/013390
Publication Date: 04.10.2018 International Filing Date: 29.03.2018
IPC:
C30B 29/36 (2006.01) ,G01N 23/20 (2018.01)
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10
Inorganic compounds or compositions
36
Carbides
G PHYSICS
01
MEASURING; TESTING
N
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
23
Investigating or analysing materials by the use of wave or particle radiation not covered by group G01N21/ or G01N22/159
20
by using diffraction of the radiation, e.g. for investigating crystal structure; by using reflection of the radiation
Applicants:
昭和電工株式会社 SHOWA DENKO K.K. [JP/JP]; 東京都港区芝大門一丁目13番9号 13-9, Shiba Daimon 1-chome, Minato-ku, Tokyo 1058518, JP
Inventors:
中林 正史 NAKABAYASHI, Masashi; JP
牛尾 昌史 USHIO, Shoji; JP
Agent:
青木 篤 AOKI, Atsushi; JP
三橋 真二 MITSUHASHI, Shinji; JP
高橋 正俊 TAKAHASHI, Masatoshi; JP
胡田 尚則 EBISUDA, Hisanori; JP
河原 肇 KAWAHARA, Hajime; JP
堂垣 泰雄 DOGAKI, Yasuo; JP
Priority Data:
2017-06938130.03.2017JP
Title (EN) METHOD FOR EVALUATING QUALITY OF SiC SINGLE CRYSTAL, AND METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL INGOT UTILIZING SAID METHOD
(FR) PROCÉDÉ D'ÉVALUATION DE LA QUALITÉ D'UN MONOCRISTAL DE SiC, ET PROCÉDÉ DE PRODUCTION D'UN LINGOT DE CARBURE DE SILICIUM MONOCRISTALLIN UTILISANT LEDIT PROCÉDÉ
(JA) SiC単結晶体の品質評価方法及びこれを利用した炭化珪素単結晶インゴットの製造方法
Abstract:
(EN) Provided are: a method for evaluating the quality of a SiC single crystal, whereby it becomes possible to evaluate the quality of a SiC single crystal by a non-destructive and simple process; and a method for producing a SiC single crystal ingot, whereby it becomes possible to produce a SiC single crystal ingot that rarely undergoes dislocation and has high quality with high reproducibility by utilizing the evaluation method. A method for evaluating the quality of a SiC single crystal, said method involving approximating a peak shift value obtained by X-ray rocking curve measurement with a polynomial, i.e. a first polynomial, from the relationship with the positions of measurement points, then differentiating the first polynomial to obtain a second polynomial, and then evaluating the quality of the SiC single crystal on the basis of a graph of the second polynomial; and a method for producing a SiC single crystal ingot, said method involving producing the SiC single crystal ingot by a sublimation-recrystallization method using, as a seed crystal, a SiC single crystal that has been evaluated by the evaluation method.
(FR) L'invention concerne : un procédé d'évaluation de la qualité d'un monocristal de SiC, grâce auquel il devient possible d'évaluer la qualité d'un monocristal de SiC par un procédé non destructif et simple; et un procédé de production d'un lingot de SiC monocristallin, grâce auquel il devient possible de produire un lingot de SiC monocristallin qui subit rarement de dislocation et présente une grande qualité, et ce avec une grande reproductibilité, en utilisant le procédé d'évaluation. L'invention concerne donc un procédé d'évaluation de la qualité d'un monocristal de SiC, ledit procédé comprenant l'approximation d'une valeur de décalage maximal obtenue par mesure d'une courbe oscillante des rayons X avec un polynôme, c'est-à-dire un premier polynôme, à partir de la relation avec les positions de points de mesure, puis la différenciation du premier polynôme pour obtenir un second polynôme, puis l'évaluation de la qualité du monocristal de SiC sur la base d'un graphique du second polynôme; et un procédé de production d'un lingot de SiC monocristallin, ledit procédé comprenant la production du lingot de SiC monocristallin par un procédé de recristallisation par sublimation utilisant, en tant que germe cristallin, un monocristal de SiC évalué par le procédé d'évaluation.
(JA) 非破壊でかつ簡便な方法により、SiC単結晶の品質を評価することができるSiC単結晶の品質評価方法、及びこれを利用して転位が少なく、品質の高いSiC単結晶インゴットを再現性良く製造することができるSiC単結晶インゴットの製造方法を提供する。 X線ロッキングカーブ測定により得られたピークシフト値を測定点の位置との関係から多項式で近似し、この第1の多項式を微分して得られた第2の多項式のグラフをもとに、SiC単結晶体の品質を評価するSiC単結晶体の品質評価方法であり、また、これによって評価したSiC単結晶体を種結晶として用いて昇華再結晶法によりSiC単結晶インゴットを製造するSiC単結晶インゴットの製造方法である。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
CN109196146DE112018000035