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1. (WO2018181788) METHOD FOR EVALUATING QUALITY OF SiC SINGLE CRYSTAL, AND METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL INGOT UTILIZING SAID METHOD

Pub. No.:    WO/2018/181788    International Application No.:    PCT/JP2018/013390
Publication Date: Fri Oct 05 01:59:59 CEST 2018 International Filing Date: Fri Mar 30 01:59:59 CEST 2018
IPC: C30B 29/36
G01N 23/20
Applicants: SHOWA DENKO K.K.
昭和電工株式会社
Inventors: NAKABAYASHI, Masashi
中林 正史
USHIO, Shoji
牛尾 昌史
Title: METHOD FOR EVALUATING QUALITY OF SiC SINGLE CRYSTAL, AND METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL INGOT UTILIZING SAID METHOD
Abstract:
Provided are: a method for evaluating the quality of a SiC single crystal, whereby it becomes possible to evaluate the quality of a SiC single crystal by a non-destructive and simple process; and a method for producing a SiC single crystal ingot, whereby it becomes possible to produce a SiC single crystal ingot that rarely undergoes dislocation and has high quality with high reproducibility by utilizing the evaluation method. A method for evaluating the quality of a SiC single crystal, said method involving approximating a peak shift value obtained by X-ray rocking curve measurement with a polynomial, i.e. a first polynomial, from the relationship with the positions of measurement points, then differentiating the first polynomial to obtain a second polynomial, and then evaluating the quality of the SiC single crystal on the basis of a graph of the second polynomial; and a method for producing a SiC single crystal ingot, said method involving producing the SiC single crystal ingot by a sublimation-recrystallization method using, as a seed crystal, a SiC single crystal that has been evaluated by the evaluation method.