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1. (WO2018181716) GARNET COMPOUND, OXIDE SINTERED COMPACT, OXIDE SEMICONDUCTOR THIN FILM, THIN FILM TRANSISTOR, ELECTRONIC DEVICE AND IMAGE SENSOR

Pub. No.:    WO/2018/181716    International Application No.:    PCT/JP2018/013243
Publication Date: Fri Oct 05 01:59:59 CEST 2018 International Filing Date: Fri Mar 30 01:59:59 CEST 2018
IPC: C04B 35/01
C23C 14/08
C23C 14/34
H01L 21/363
H01L 27/146
H01L 29/786
Applicants: IDEMITSU KOSAN CO.,LTD.
出光興産株式会社
Inventors: INOUE Kazuyoshi
井上 一吉
SHIBATA Masatoshi
柴田 雅敏
KAWASHIMA Emi
川嶋 絵美
TSURUMA Yuki
霍間 勇輝
TOMAI Shigekazu
笘井 重和
Title: GARNET COMPOUND, OXIDE SINTERED COMPACT, OXIDE SEMICONDUCTOR THIN FILM, THIN FILM TRANSISTOR, ELECTRONIC DEVICE AND IMAGE SENSOR
Abstract:
Provided is an oxide sintered compact containing the elements In, Y, and Ga in atomic ratios which fall within the ranges prescribed by formulae (1) to (3). Formula (1): 0.80≤In/(In+Y+Ga) ≤0.96 Formula (2): 0.02≤Y/(In+Y+Ga)≤0.10 Formula (3): 0.02≤Ga/(In+Y+Ga) ≤0.10. Element Al is contained in an atomic ratio which falls within the range prescribed by formula (4). Formula (4): 0.005≤Al/(In+Y+Ga+Al)≤0.07. (In the formula, In, Y, Ga and Al respectively represent the number of atoms of the elements In, Y, Ga and Al in the oxide sintered compact.)