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1. (WO2018181438) IMAGING PANEL AND METHOD FOR MANUFACTURING SAME
Latest bibliographic data on file with the International BureauSubmit observation

Pub. No.: WO/2018/181438 International Application No.: PCT/JP2018/012669
Publication Date: 04.10.2018 International Filing Date: 28.03.2018
IPC:
H01L 27/146 (2006.01) ,G01T 1/20 (2006.01) ,H01L 27/144 (2006.01) ,H01L 29/786 (2006.01) ,H01L 31/08 (2006.01) ,H04N 5/321 (2006.01) ,H04N 5/361 (2011.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144
Devices controlled by radiation
146
Imager structures
G PHYSICS
01
MEASURING; TESTING
T
MEASUREMENT OF NUCLEAR OR X-RADIATION
1
Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
16
Measuring radiation intensity
20
with scintillation detectors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144
Devices controlled by radiation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
in which radiation controls flow of current through the device, e.g. photoresistors
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
N
PICTORIAL COMMUNICATION, e.g. TELEVISION
5
Details of television systems
30
Transforming light or analogous information into electric information
32
Transforming X-rays
321
with video transmission of fluoroscopic images
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
N
PICTORIAL COMMUNICATION, e.g. TELEVISION
5
Details of television systems
30
Transforming light or analogous information into electric information
335
using solid-state image sensors [SSIS]
357
Noise processing, e.g. detecting, correcting, reducing or removing noise
361
applied to dark current
Applicants:
シャープ株式会社 SHARP KABUSHIKI KAISHA [JP/JP]; 大阪府堺市堺区匠町1番地 1 Takumi-cho, Sakai-ku, Sakai City, Osaka 5908522, JP
Inventors:
中村 友 NAKAMURA Yu; --
冨安 一秀 TOMIYASU Kazuhide; --
中澤 淳 NAKAZAWA Makoto; --
森脇 弘幸 MORIWAKI Hiroyuki; --
中村 渉 NAKAMURA Wataru; --
中野 文樹 NAKANO Fumiki; --
Agent:
川上 桂子 KAWAKAMI Keiko; JP
松山 隆夫 MATSUYAMA Takao; JP
Priority Data:
2017-06893330.03.2017JP
Title (EN) IMAGING PANEL AND METHOD FOR MANUFACTURING SAME
(FR) PANNEAU D'IMAGERIE ET PROCÉDÉ DE FABRICATION CORRESPONDANT
(JA) 撮像パネル及びその製造方法
Abstract:
(EN) The present invention provides an X-ray imaging panel, and a method for manufacturing the same, with which it is possible to suppress leak current in a photoelectric conversion layer while reducing the number of processes for manufacturing the imaging panel. An imaging panel 1 for generating an image on the basis of scintillation light obtained from X-rays transmitted through a subject. The imaging panel 1 is provided with a thin film transistor 13, passivation films 103, 104 covering the thin film transistor 13, a photoelectric conversion layer 15 for converting the scintillation light into an electrical charge, an upper electrode 16, and a lower electrode 14 connected to the thin film transistor 13, said elements being provided on a substrate 101. The end parts of the lower electrode 14 are disposed on the inner side relative to the end parts of the photoelectric conversion layer 15. The lower electrode 14 and the thin film transistor 13 are connected via a contact hole CH1 formed in the passivation films 103, 104 in a region in which the photoelectric conversion layer 15 is provided.
(FR) La présente invention concerne un panneau d'imagerie à rayons X et un procédé de fabrication correspondant, qui permettent de supprimer le courant de fuite dans une couche de conversion photoélectrique et de réduire en même temps le nombre de processus nécessaires à la fabrication du panneau d'imagerie. Le panneau d'imagerie (1) sert à produire une image sur la base d'une lumière de scintillation obtenue à partir de rayons X ayant traversé un objet. Le panneau d'imagerie (1) est pourvu d'un transistor à couches minces (13), de films de passivation (103, 104) recouvrant le transistor à couches minces (13), d'une couche de conversion photoélectrique (15) pour convertir la lumière de scintillation en une charge électrique, d'une électrode supérieure (16) et d'une électrode inférieure (14) connectée au transistor à couches minces (13), lesdits éléments se situant sur un substrat (101). Les parties d'extrémité de l'électrode inférieure (14) sont placées sur le côté interne par rapport aux parties d'extrémité de la couche de conversion photoélectrique (15). L'électrode inférieure (14) et le transistor à couches minces (13) sont connectés par l'intermédiaire d'un trou de contact (CH1) formé dans les films de passivation (103, 104), dans la région dans laquelle la couche de conversion photoélectrique (15) se situe.
(JA) 撮像パネルを作製する工程を削減しつつ、光電変換層のリーク電流を抑制し得るX線の撮像パネル及びその製造方法を提供すること。撮像パネル1は、被写体を通過したX線から得られたシンチレーション光に基づいて画像を生成する。撮像パネル1は、基板101上に、薄膜トランジスタ13と、薄膜トランジスタ13を覆うパッシベーション膜103、104と、シンチレーション光を電荷に変換する光電変換層15と、上部電極16と、薄膜トランジスタ13と接続された下部電極14とを備える。下部電極14の端部は、光電変換層15の端部よりも内側に配置される。下部電極14と薄膜トランジスタ13は、光電変換層15が設けられた領域において、パッシベーション膜103、104に形成されたコンタクトホールCH1を介して接続されている。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)