Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2018181104) DRY ETCHING METHOD OR DRY CLEANING METHOD
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/181104 International Application No.: PCT/JP2018/011990
Publication Date: 04.10.2018 International Filing Date: 26.03.2018
IPC:
H01L 21/302 (2006.01) ,C23C 16/44 (2006.01) ,H01L 21/205 (2006.01) ,H01L 21/3065 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205
using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
3065
Plasma etching; Reactive-ion etching
Applicants:
関東電化工業株式会社 KANTO DENKA KOGYO CO., LTD. [JP/JP]; 東京都千代田区神田淡路町二丁目105番地 2-105, Kanda-Awajicho, Chiyoda-ku, Tokyo 1010063, JP
Inventors:
高橋 至直 TAKAHASHI, Yoshinao; JP
深江 功也 FUKAE, Katsuya; JP
加藤 惟人 KATO, Korehito; JP
Agent:
小野 新次郎 ONO, Shinjiro; JP
山本 修 YAMAMOTO, Osamu; JP
宮前 徹 MIYAMAE, Toru; JP
中西 基晴 NAKANISHI, Motoharu; JP
松田 豊治 MATSUDA, Toyoharu; JP
Priority Data:
2017-06126227.03.2017JP
Title (EN) DRY ETCHING METHOD OR DRY CLEANING METHOD
(FR) PROCÉDÉ DE GRAVURE SÈCHE OU PROCÉDÉ DE NETTOYAGE À SEC
(JA) ドライエッチング方法またはドライクリーニング方法
Abstract:
(EN) A method for selectively etching a film comprising Si, such as polycrystalline silicon (poly-Si), single-crystalline silicon (single-crystalline Si), or amorphous silicon (a-Si) as a principal component. Also provided is a cleaning method for removing a deposit or an attachment comprising Si as a major component that has become deposited or attached in a sample chamber of a device for performing film formation, such as a chemical vapor deposition (CVD) device, without damaging the inside of the device. A monofluoro interhalogen gas (XF, where X is one of Cl, Br, and I) and nitrogen monoxide (NO) are simultaneously introduced into a device for performing etching or film formation and excited by heat, whereby it becomes possible to reduce the etch rate for SiN or SiO2 and to selectively and rapidly etch a film comprising Si, such as poly-Si, single-crystalline Si, or a-Si, as a major component. It is also possible to perform cleaning by removing a deposit or an attachment comprising Si as a major component that has become deposited or attached in a device for performing film formation, such as a CVD device, without damaging the inside of the device.
(FR) La présente invention concerne un procédé de gravure sélective d'un film comprenant du Si, tel que du silicium polycristallin (Si poly), du silicium monocristallin (Si monocristallin) ou du silicium amorphe (Si-a) comme composant principal. L'invention concerne également un procédé de nettoyage pour retirer un dépôt ou une fixation comprenant du Si comme composant principal qui a été déposé ou fixé dans une chambre d'échantillon d'un dispositif pour réaliser une formation de film, tel qu'un dispositif de dépôt chimique en phase vapeur (CVD), sans endommager l'intérieur du dispositif. Un gaz interhalogéné monofluoré (XF, où X est Cl et/ou Br et/ou I) et du monoxyde d'azote (NO) sont simultanément introduits dans un dispositif pour réaliser une gravure ou une formation de film et excité par la chaleur, grâce à quoi il devient possible de réduire le taux de gravure pour SiN ou SiO2 et de graver sélectivement et rapidement un film comprenant du Si, tel que du Si polycristallin, du Si monocristallin ou du Si-a, comme composant principal. Il est également possible d'effectuer un nettoyage en retirant un dépôt ou une fixation comprenant du Si comme composant principal qui a été déposé ou fixé dans un dispositif pour réaliser une formation de film, tel qu'un dispositif CVD, sans endommager l'intérieur du dispositif.
(JA) 多結晶シリコン(Poly-Si)や単結晶シリコン(単結晶Si)、アモルファスシリコン(a-Si)といったSiを主要な成分とする膜を選択的にエッチングする方法。また、化学気相成長(CVD)装置など成膜を行う装置の試料室内に堆積、付着したSiを主成分とする堆積物、付着物を装置内部にダメージを与えずに除去、クリーニングする方法を提供する。 モノフルオロインターハロゲンガス(XF、ここで、XはCl,Br,Iのいずれかである。)と一酸化窒素(NO)を同時に、エッチング、もしくは成膜を行う装置の内部に導入し、熱で励起することで、SiNやSiO2のエッチングレートを低下させるとともに、Poly-Siや単結晶Si、a-Si等のSiを主成分とする膜を選択的、且つ高速にエッチングすることができる。また、CVD装置等の成膜を行う装置の内部に堆積、付着したSiを主成分とする堆積物、付着物を装置内部にダメージを与えずに除去、クリーニングすることが可能である。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)