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1. (WO2018180952) NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT, METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE
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Pub. No.: WO/2018/180952 International Application No.: PCT/JP2018/011598
Publication Date: 04.10.2018 International Filing Date: 23.03.2018
IPC:
H01S 5/343 (2006.01) ,H01L 21/301 (2006.01) ,H01S 5/02 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
30
Structure or shape of the active region; Materials used for the active region
34
comprising quantum well or superlattice structures, e.g. single quantum well lasers (SQW-lasers), multiple quantum well lasers (MQW-lasers), graded index separate confinement heterostructure lasers (GRINSCH-lasers)
343
in AIIIBV compounds, e.g. AlGaAs-laser
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
301
to subdivide a semiconductor body into separate parts, e.g. making partitions
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
02
Structural details or components not essential to laser action
Applicants: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.[JP/JP]; 1-61, Shiromi 2-chome, Chuo-ku, Osaka-shi, Osaka 5406207, JP
Inventors: IKEDA Daisuke; --
SHIMIZU Gen; --
KITAGAWA Hideo; --
TAKAYAMA Toru; --
ONO Masayuki; --
SAMONJI Katsuya; --
TOMITA Osamu; --
KAWASAKI Satoko; --
Agent: KAMATA Kenji; JP
MAEDA Hiroo; JP
Priority Data:
2017-06556829.03.2017JP
2017-19080129.09.2017JP
Title (EN) NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT, METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE
(FR) ÉLÉMENT ÉLECTROLUMINESCENT À SEMI-CONDUCTEUR AU NITRURE, PROCÉDÉ DE FABRICATION D'UN ÉLÉMENT ÉLECTROLUMINESCENT À SEMI-CONDUCTEUR AU NITRURE ET DISPOSITIF ÉLECTROLUMINESCENT À SEMI-CONDUCTEUR AU NITRURE
(JA) 窒化物半導体発光素子、窒化物半導体発光素子の製造方法及び窒化物半導体発光装置
Abstract:
(EN) A method for manufacturing a nitride semiconductor light-emitting element (1), in which a semiconductor layer laminated substrate (2) on which a semiconductor layer laminate (200A) is formed is divided to form a bar-form substrate (3), and a segment element (4) is produced by dividing the bar-shaped substrate (3) along the longitudinal division line (YL), the semiconductor layer laminate (200A) having a plurality of waveguides (201) extending in the Y-axis direction, wherein: the width of one end part of a waveguide (201) of the segment element (4) is different from the width of the other end part; and in the semiconductor layer laminated substrate (2), which has a first element forming region (301) and a second element forming region (302) that are disposed in positions offset in the X-axis direction and are adjacent in the X-axis direction, two longitudinal division lines (YL) sandwiching the first element forming region (301) and two longitudinal division lines (YL) sandwiching the second element forming region (302) are skewed in the X-axis direction.
(FR) L'invention concerne un procédé de fabrication d'un élément électroluminescent à semi-conducteur au nitrure (1), dans lequel un substrat stratifié de couche semi-conductrice (2) sur lequel est formé un stratifié de couche semi-conductrice (200A) est divisé pour former un substrat en forme de barre (3), et un élément de segment (4) est produit par division du substrat en forme de barre (3) le long de la ligne de division longitudinale (YL), le stratifié de couche semi-conductrice (200A) ayant une pluralité de guides d'ondes (201) s'étendant dans la direction de l'axe Y, la largeur d'une partie d'extrémité d'un guide d'ondes (201) de l'élément de segment (4) étant différente de la largeur de l'autre partie d'extrémité ; et dans le substrat stratifié de couche semi-conductrice (2), qui a une première région de formation d'élément (301) et une seconde région de formation d'élément (302) qui sont disposées dans des positions décalées dans la direction de l'axe X et sont adjacentes dans la direction de l'axe X, deux lignes de division longitudinales (YL) prenant en sandwich la première région de formation d'élément (301) et deux lignes de division longitudinale (YL) prenant en sandwich la seconde région de formation d'élément (302) étant obliques dans la direction de l'axe X.
(JA) Y軸方向に延在する複数の導波路(201)を有する半導体層積層体(200A)が形成された半導体層積層基板(2)を分割してバー状基板(3)を作製し、縦方向分割線(YL)に沿ってバー状基板(3)を分割することで個片素子(4)を作製して窒化物半導体発光素子(1)を製造する方法において、個片素子(4)の導波路(201)は、一方の端部の幅が他端の端部の幅と異なり、かつ、X軸方向にオフセットされた位置に配置されており、X軸方向に隣り合う第1素子形成領域(301)及び第2素子形成領域(302)を有する半導体層積層基板(2)において、第1素子形成領域(301)を挟む2つの縦方向分割線(YL)と第2素子形成領域(302)を挟む2つの縦方向分割線(YL)とはX軸方向にずれている。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)