Search International and National Patent Collections

1. (WO2018180842) TFT SUBSTRATE, TFT SUBSTRATE PRODUCTION METHOD, AND DISPLAY DEVICE

Pub. No.:    WO/2018/180842    International Application No.:    PCT/JP2018/011294
Publication Date: Fri Oct 05 01:59:59 CEST 2018 International Filing Date: Fri Mar 23 00:59:59 CET 2018
IPC: G09F 9/30
G02F 1/1343
G02F 1/1368
H01L 27/32
H01L 29/786
H01L 51/50
H05B 33/02
Applicants: SHARP KABUSHIKI KAISHA
シャープ株式会社
Inventors: OKABE, Tohru
岡部 達
NISHIKI, Hirohiko
錦 博彦
YANEDA, Takeshi
家根田 剛士
Title: TFT SUBSTRATE, TFT SUBSTRATE PRODUCTION METHOD, AND DISPLAY DEVICE
Abstract:
The present invention achieves stable connection, in a TFT substrate including a semiconductor film in each of a lower layer part and an upper layer part thereof, between a conductor in the lower layer part and a conductor in the upper layer part. The substrate is provided thereon with: a first semiconductor film (6) that functions as a channel for TFT; a first conductor (M1) that is disposed in a layer above the first semiconductor film; an interlayer insulating film (18) that is disposed in a layer above the first conductor; a second semiconductor film (26) that is disposed in a layer above the interlayer insulating film; a second conductor (J2) that is disposed in a layer above the second semiconductor film; an organic insulating film (32) that is disposed in a layer above the second conductor; a third conductor (M3) that is disposed in a layer above the organic insulating film; and a contact hole (CH) that extends through a through-hole (H32) in the organic insulating film and a through-hole (H18) in the interlayer insulating film and reaches the first conductor, wherein the second conductor (J2) and the third conductor (M3) are formed so as to overlap the opening plane (K) of the contact hole, and the third conductor (M3) is in contact with the first conductor (M1) and the second conductor (J2).