Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2018180673) METHOD FOR MANUFACTURING GROUP III-NITRIDE SEMICONDUCTOR SUBSTRATE, GROUP III-NITRIDE SEMICONDUCTOR SUBSTRATE, AND BULK CRYSTAL
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/180673 International Application No.: PCT/JP2018/010717
Publication Date: 04.10.2018 International Filing Date: 19.03.2018
IPC:
C30B 29/38 (2006.01) ,C23C 16/34 (2006.01) ,H01L 21/205 (2006.01)
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10
Inorganic compounds or compositions
38
Nitrides
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
22
characterised by the deposition of inorganic material, other than metallic material
30
Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
34
Nitrides
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205
using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
Applicants:
古河機械金属株式会社 FURUKAWA CO., LTD. [JP/JP]; 東京都千代田区丸の内二丁目2番3号 2-3, Marunouchi 2-chome, Chiyoda-ku, Tokyo 1008370, JP
Inventors:
石原 裕次郎 ISHIHARA Yujiro; JP
後藤 裕輝 GOTO Hiroki; JP
布田 将一 HUDA Syouichi; JP
小林 智浩 KOBAYASHI Tomohiro; JP
佐々木 斉 SASAKI Hitoshi; JP
Agent:
速水 進治 HAYAMI Shinji; JP
Priority Data:
2017-06236128.03.2017JP
Title (EN) METHOD FOR MANUFACTURING GROUP III-NITRIDE SEMICONDUCTOR SUBSTRATE, GROUP III-NITRIDE SEMICONDUCTOR SUBSTRATE, AND BULK CRYSTAL
(FR) PROCÉDÉ DE FABRICATION D'UN SUBSTRAT SEMI-CONDUCTEUR À BASE DE NITRURE DU GROUPE III, SUBSTRAT SEMI-CONDUCTEUR À BASE DE NITRURE DU GROUPE III, ET CRISTAL MASSIF
(JA) III族窒化物半導体基板の製造方法、III族窒化物半導体基板、及び、バルク結晶
Abstract:
(EN) Provided is a method for manufacturing a group III-nitride semiconductor substrate, the method comprising: an attachment step S10 for fixedly attaching a base substrate to a susceptor, wherein the base substrate includes a group III-nitride semiconductor layer having a semipolar plane as a main surface; a first growth step S11 for forming a first growth layer by growing a group III-nitride semiconductor on the main surface of the group III-nitride semiconductor layer through an HVPE process, while the base substrate is fixedly attached to the susceptor; a cooling step S12 for cooling a laminate including the susceptor, the base substrate, and the first growth layer; and a second growth step S13 for forming a second growth layer by growing the group III-nitride semiconductor on the first growth layer through an HVPE process, while the base substrate is attached to the susceptor.
(FR) L'invention concerne un procédé de fabrication d'un substrat semi-conducteur à base de nitrure du groupe III, le procédé comprenant : une étape de fixation S10 pour fixer à demeure un substrat de base à un suscepteur, le substrat de base comprenant une couche semi-conductrice à base de nitrure du groupe III à plan semi-polaire en tant que surface principale ; une première étape de croissance S11 pour former une première couche de croissance par croissance d'un semi-conducteur à base de nitrure du groupe III sur la surface principale de la couche semi-conductrice à base de nitrure du groupe III par le procédé HVPE, tandis que le substrat de base est fixé à demeure au suscepteur ; une étape de refroidissement S12 pour refroidir un stratifié comprenant le suscepteur, le substrat de base et la première couche de croissance ; et une seconde étape de croissance S13 pour former une seconde couche de croissance par croissance du semi-conducteur à base de nitrure du groupe III sur la première couche de croissance par le procédé HVPE, tandis que le substrat de base est fixé au suscepteur.
(JA) 半極性面を主面とするIII族窒化物半導体層を含む下地基板をサセプターに固着させる固着工程S10と、サセプターに下地基板を固着させた状態で、III族窒化物半導体層の主面上にHVPE法でIII族窒化物半導体を成長させ、第1の成長層を形成する第1の成長工程S11と、サセプター、下地基板及び第1の成長層を含む積層体を冷却する冷却工程S12と、サセプターに下地基板を固着させた状態で、第1の成長層の上に、HVPE法でIII族窒化物半導体を成長させ、第2の成長層を形成する第2の成長工程S13と、を有するIII族窒化物半導体基板の製造方法を提供する。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)