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|1. (WO2018180576) SEMICONDUCTOR DEVICE, SOLID-STATE IMAGING DEVICE, AND ELECTRONIC EQUIPMENT|
|Applicants:||SONY SEMICONDUCTOR SOLUTIONS CORPORATION
|Title:||SEMICONDUCTOR DEVICE, SOLID-STATE IMAGING DEVICE, AND ELECTRONIC EQUIPMENT|
This technology pertains to a semiconductor device, a solid-state imaging device, and electronic equipment, which are able to suppress increase of resistivity to a high level at a connection portion between an ESV and a wiring layer and to improve reliability of an electric connection using an ESV. The semiconductor device according to a first aspect of the present invention has a plurality of semiconductor substrates mutually laminated, and is provided with: a through electrode that penetrates a silicon layer of the semiconductor substrates; a wiring layer that is formed inside the semiconductor substrates; and a through electrode reception part that is connected to the wiring layer, wherein the through electrode has a width narrower than the through electrode reception part, and the through electrode is electrically connected to the wiring layer via the through electrode reception part. The present technology is applicable, for example, to a CMOS image sensor.