Search International and National Patent Collections

1. (WO2018180576) SEMICONDUCTOR DEVICE, SOLID-STATE IMAGING DEVICE, AND ELECTRONIC EQUIPMENT

Pub. No.:    WO/2018/180576    International Application No.:    PCT/JP2018/010394
Publication Date: Fri Oct 05 01:59:59 CEST 2018 International Filing Date: Sat Mar 17 00:59:59 CET 2018
IPC: H01L 21/3205
H01L 21/768
H01L 23/522
H01L 25/065
H01L 25/07
H01L 25/18
H01L 27/146
H04N 5/369
Applicants: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
ソニーセミコンダクタソリューションズ株式会社
Inventors: HAGIMOTO Yoshiya
萩本 賢哉
Title: SEMICONDUCTOR DEVICE, SOLID-STATE IMAGING DEVICE, AND ELECTRONIC EQUIPMENT
Abstract:
This technology pertains to a semiconductor device, a solid-state imaging device, and electronic equipment, which are able to suppress increase of resistivity to a high level at a connection portion between an ESV and a wiring layer and to improve reliability of an electric connection using an ESV. The semiconductor device according to a first aspect of the present invention has a plurality of semiconductor substrates mutually laminated, and is provided with: a through electrode that penetrates a silicon layer of the semiconductor substrates; a wiring layer that is formed inside the semiconductor substrates; and a through electrode reception part that is connected to the wiring layer, wherein the through electrode has a width narrower than the through electrode reception part, and the through electrode is electrically connected to the wiring layer via the through electrode reception part. The present technology is applicable, for example, to a CMOS image sensor.