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Pub. No.: WO/2018/180312 International Application No.: PCT/JP2018/008802
Publication Date: 04.10.2018 International Filing Date: 07.03.2018
H01L 21/338 (2006.01) ,H01L 21/20 (2006.01) ,H01L 29/20 (2006.01) ,H01L 29/778 (2006.01) ,H01L 29/812 (2006.01)
[IPC code unknown for H01L 21/338][IPC code unknown for H01L 21/20][IPC code unknown for H01L 29/20][IPC code unknown for H01L 29/778][IPC code unknown for H01L 29/812]
エア・ウォーター株式会社 AIR WATER INC. [JP/JP]; 北海道札幌市中央区北3条西1丁目2番地 2, Kita 3-jo Nishi 1-chome, Chuo-ku, Sapporo-shi Hokkaido 0600003, JP
生川 満久 NARUKAWA, Mitsuhisa; JP
大内 澄人 OUCHI, Sumito; JP
鈴木 悠宜 SUZUKI, Hiroki; JP
川村 啓介 KAWAMURA, Keisuke; JP
椿 豊 TSUBAKI, Yutaka; JP
Priority Data:
(JA) 化合物半導体基板
(EN) A compound semiconductor substrate provided with a silicon carbide (SiC) layer, an aluminum nitride (AlN) buffer layer formed on the SiC layer, an aluminum (Al) nitride semiconductor layer formed on the AlN buffer layer, a composite layer formed on the Al nitride semiconductor layer, a gallium nitride (GaN) layer formed on the composite layer as an electron transit layer, and an Al nitride semiconductor layer formed on the GaN layer as a barrier layer. The composite layer includes a plurality of C-GaN layers that are stacked in the vertical direction, and an AlN layer formed between the plurality of C-GaN layers.
(FR) La présente invention concerne un substrat semi-conducteur composite doté d'une couche de carbure de silicium (SiC), d'une couche tampon de nitrure d'aluminium (Al) formée sur la couche de SiC, d'une couche semi-conductrice de nitrure d'aluminium (Al) formée sur la couche tampon d'AlN, d'une couche composite formée sur la couche semi-conductrice de nitrure d'aluminium, d'une couche de nitrure de gallium (GaN) formée sur la couche composite en tant que couche de transit d'électrons, et d'une couche semi-conductrice de nitrure d'aluminium formée sur la couche de GaN en tant que couche barrière. La couche composite comprend une pluralité de couches C-GaN empilées dans la direction verticale, et une couche d'AlN formée entre la pluralité de couches C-GaN.
(JA) 化合物半導体基板は、SiC(炭化ケイ素)層と、SiC層上に形成されたAlN(窒化アルミニウム)バッファー層と、AlNバッファー層上に形成された、Al(アルミニウム)窒化物半導体層と、Al窒化物半導体層上に形成された複合層と、複合層上に形成された電子走行層としてのGaN(窒化ガリウム)層と、GaN層上に形成された障壁層としてのAl窒化物半導体層とを備えている。複合層は、上下方向に積層された複数のC-GaN層と、複数のC-GaN層の間に形成されたAlN層とを含んでいる。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)