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1. (WO2018180255) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
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Pub. No.: WO/2018/180255 International Application No.: PCT/JP2018/008377
Publication Date: 04.10.2018 International Filing Date: 05.03.2018
IPC:
H01L 25/07 (2006.01) ,H01L 23/48 (2006.01) ,H01L 23/50 (2006.01) ,H01L 25/18 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03
all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04
the devices not having separate containers
07
the devices being of a type provided for in group H01L29/78
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
48
Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
48
Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
50
for integrated circuit devices
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
18
the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/-H01L51/160
Applicants:
ローム株式会社 ROHM CO., LTD. [JP/JP]; 京都府京都市右京区西院溝崎町21番地 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto-shi, Kyoto 6158585, JP
Inventors:
齊藤 光俊 SAITO, Koshun; JP
高橋 敬一 TAKAHASHI, Keiichi; JP
Agent:
特許業務法人あい特許事務所 AI ASSOCIATION OF PATENT AND TRADEMARK ATTORNEYS; 大阪府大阪市中央区南本町二丁目6番12号 サンマリオンNBFタワー21階 Sun Mullion NBF Tower, 21st Floor, 6-12, Minamihommachi 2-chome, Chuo-ku, Osaka-shi, Osaka 5410054, JP
Priority Data:
2017-06319828.03.2017JP
Title (EN) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
(FR) DISPOSITIF À SEMI-CONDUCTEUR ET PROCÉDÉ DE FABRICATION D'UN DISPOSITIF À SEMI-CONDUCTEUR
(JA) 半導体装置および半導体装置の製造方法
Abstract:
(EN) This semiconductor device includes: a semiconductor element; a packaging material for encapsulating the semiconductor element; and a metal member electrically connected to the semiconductor element and having a protrusion part protruding from an end surface of the packaging material. The protrusion part has: a lateral peripheral edge along the end surface of the packaging material; a longitudinal peripheral edge along a direction normal to said end surface; and a corner peripheral edge disposed on a corner section of the protrusion part, and formed by side sections that continue to the lateral peripheral edge and the longitudinal peripheral edge. The corner peripheral edge includes: a first side section which approximately perpendicularly crosses the lateral peripheral edge, and extends in a direction approaching the end surface of the packaging material; and a second side section having one end approximately perpendicularly crossing the first side section and the other end approximately perpendicularly crossing the longitudinal peripheral edge.
(FR) La présente invention concerne un dispositif à semi-conducteur, comprenant : un élément semi-conducteur ; un matériau d'encapsulation destiné à encapsuler l'élément semi-conducteur ; et un élément métallique connecté électriquement à l'élément semi-conducteur et présentant une partie saillante partant d'une surface d'extrémité du matériau d'encapsulation. La partie saillante comporte : un bord périphérique latéral le long de la surface d'extrémité du matériau d'encapsulation ; un bord périphérique longitudinal le long d'une direction perpendiculaire à ladite surface d'extrémité ; et un bord périphérique d'angle situé sur une section d'angle de la partie saillante et constitué par des sections latérales s'étendant jusqu'aux bords périphériques latéral et longitudinal. Le bord périphérique d'angle comprend : une première section latérale qui croise approximativement perpendiculairement le bord périphérique latéral et qui s'étend dans une direction d'approche de la surface d'extrémité du matériau d'encapsulation ; et une seconde section latérale dont une extrémité croise approximativement perpendiculairement la première section latérale et l'autre extrémité croise approximativement perpendiculairement le bord périphérique longitudinal.
(JA) 半導体装置は、半導体素子と、前記半導体素子を封止するパッケージ材と、前記半導体素子に電気的に接続され、前記パッケージ材の端面から突出する突出部を有する金属部材とを含み、前記突出部は、前記パッケージ材の前記端面に沿う横方向周縁と、当該端面に対する法線方向に沿う縦方向周縁と、前記突出部の角部に配置され、前記横方向周縁および前記縦方向周縁に連続する辺部で構成された角周縁とを有し、前記角周縁は、前記横方向周縁に対して略垂直に交差し、前記パッケージ材の前記端面に近づく方向に延びる第1辺部と、前記第1辺部と略垂直に交差する一端および前記縦方向周縁と略垂直に交差する他端を有する第2辺部とを含む。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)