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1. (WO2018180189) BONDING WIRE AND SEMICONDUCTOR DEVICE

Pub. No.:    WO/2018/180189    International Application No.:    PCT/JP2018/007938
Publication Date: Fri Oct 05 01:59:59 CEST 2018 International Filing Date: Sat Mar 03 00:59:59 CET 2018
IPC: H01L 21/60
Applicants: TATSUTA ELECTRIC WIRE & CABLE CO., LTD.
タツタ電線株式会社
Inventors: TAKIGAWA, Tamami
滝川 圭美
FUJIKAWA, Ryota
藤川 良太
Title: BONDING WIRE AND SEMICONDUCTOR DEVICE
Abstract:
The purpose of the present invention is to provide a bonding wire and a semiconductor device. The bonding wire is based on Ag and makes it possible to improve the sphericity or thermal shock resistance of a free air ball (FAB) and to reduce the height of a loop formed during wiring, making it possible to reduce the thickness of a semiconductor device. The bonding wire has: a Pd content of not less than 0.1 mass% and not more than 10 mass%; a Cu content of not less than 0.05 mass% and not more than 2 mass%; a total content of not less than 20 ppm by mass and not more than 500 ppm by mass of one or more elements selected from the group consisting of Ca, Y, Sm, La, Ce, Nd, Eu, Gd, and Sc; a total content of not less than 0 ppm by mass and not more than 500 ppm by mass of one or more elements selected from the group consisting of Ge, Bi, and Mg; and the remainder comprising Ag.