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1. (WO2018180045) RESIST PATTERN FORMING METHOD

Pub. No.:    WO/2018/180045    International Application No.:    PCT/JP2018/006275
Publication Date: Fri Oct 05 01:59:59 CEST 2018 International Filing Date: Thu Feb 22 00:59:59 CET 2018
IPC: G03F 7/012
G03F 7/20
G03F 7/40
Applicants: ZEON CORPORATION
日本ゼオン株式会社
Inventors: SATO Nobuhiro
佐藤 信寛
Title: RESIST PATTERN FORMING METHOD
Abstract:
The purpose of the present invention is to provide a resist pattern forming method by which a resist pattern having an inverse taper shape with a good cross-section and having a reduced amount of residual moisture and residual organic components can be formed. The resist forming method of the present invention comprises: a step for forming a radiation-sensitive resin film by using a resin solution including an alkali soluble resin, a cross-linking component, and an organic solvent; a step for forming a cured film by exposing the radiation-sensitive resin film to light; a step for forming a developed pattern by developing the cured film; and a step for obtaining a resist pattern by performing a post-development bake on the developed pattern, wherein the alkali soluble resin includes 35-90 mass% of a polyvinylphenol resin, and the temperature of the post-development bake is 200°C or higher.