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1. (WO2018179945) SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD
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Pub. No.: WO/2018/179945 International Application No.: PCT/JP2018/005064
Publication Date: 04.10.2018 International Filing Date: 14.02.2018
IPC:
H01L 21/304 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304
Mechanical treatment, e.g. grinding, polishing, cutting
Applicants:
株式会社SCREENホールディングス SCREEN HOLDINGS CO., LTD. [JP/JP]; 京都府京都市上京区堀川通寺之内上る4丁目天神北町1番地の1 Tenjinkita-machi 1-1, Teranouchi-agaru 4-chome, Horikawa-dori, Kamigyo-ku, Kyoto-shi, Kyoto 6028585, JP
Inventors:
上田 大 UEDA, Dai; JP
長谷川 愛子 HASEGAWA, Aiko; JP
Agent:
振角 正一 FURIKADO, Shoichi; JP
大西 一正 OHNISHI, Kazumasa; JP
Priority Data:
2017-06091227.03.2017JP
Title (EN) SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD
(FR) DISPOSITIF DE TRAITEMENT DE SUBSTRAT ET PROCÉDÉ DE TRAITEMENT DE SUBSTRAT
(JA) 基板処理装置および基板処理方法
Abstract:
(EN) Provided is a substrate processing technique including a process of forming a liquid film on an upper surface of a substrate and solidifying the liquid film, the technique allowing for satisfactory solidification of the liquid film to a peripheral portion of the substrate in a short time. A substrate processing device 1 is provided with: a substrate holding portion 11 which holds the peripheral portion of a substrate W and rotates the substrate about a rotating axis in parallel with the vertical direction while supporting the substrate W in a horizontal attitude; a processing liquid supply portion 84 which supplies a processing liquid onto an upper surface of the substrate W to form a liquid film of the processing liquid; and a refrigerant supply portion 86 which supplies, from under the substrate W onto a lower surface of the substrate W, a refrigerant which is a fluid having a lower temperature than the solidification point of the processing liquid to solidify the liquid film. After the supply of a predetermined flow volume of the refrigerant toward the center of rotation on the lower surface of the substrate W is started by the refrigerant supply portion 86, the flow velocity and/or supply amount of the refrigerant supplied to the peripheral portion on the lower surface of the substrate W is increased over time.
(FR) L'invention concerne une technique de traitement de substrat comprenant un processus de formation d'un film liquide sur une surface supérieure d'un substrat et de solidification du film liquide, la technique permettant une solidification satisfaisante du film liquide sur une partie périphérique du substrat en un temps court. Un dispositif de traitement de substrat (1) comporte : une partie de maintien de substrat (11) qui maintient la partie périphérique d'un substrat (W) et fait tourner le substrat autour d'un axe de rotation en parallèle avec la direction verticale tout en maintenant le substrat (W) dans une position horizontale; une partie d'alimentation en liquide de traitement (84) qui fournit un liquide de traitement sur une surface supérieure du substrat (W) afin de former un film liquide du liquide de traitement; et une partie d'alimentation en fluide frigorigène (86) qui fournit, depuis le dessous du substrat (W) jusqu'à une surface inférieure du substrat (W), un fluide frigorigène qui est un fluide ayant une température inférieure à celle du point de solidification du liquide de traitement afin de solidifier le film liquide. Après que la fourniture d'un volume d'écoulement prédéterminé du fluide frigorigène vers le centre de rotation sur la surface inférieure du substrat (W) est démarrée par la partie d'alimentation en fluide frigorigène (86), la vitesse d'écoulement et/ou la quantité d'alimentation en fluide frigorigène fourni à la partie périphérique sur la surface inférieure du substrat (W) est augmentée dans le temps.
(JA) 基板の上面に液膜を形成してこれを凝固させるプロセスを含む基板処理技術において、短時間で基板の周縁部まで液膜を良好に凝固させる技術を提供する。基板処理装置1は、基板Wの周縁部を保持して基板Wを水平姿勢に支持しながら、基板を鉛直方向に平行な回転軸周りに回転させる基板保持部11と、基板Wの上面に処理液を供給して処理液の液膜を形成させる処理液供給部84と、基板Wの下方から基板Wの下面に処理液の凝固点よりも低温の流体である冷媒を供給して液膜を凝固させる冷媒供給部86とを備え、冷媒供給部86が基板Wの下面の回転中心に向けて所定流量の冷媒を供給開始した後、基板Wの下面の周縁部に供給される冷媒の流速および供給量の少なくとも一方を経時的に増加させる。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)