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1. (WO2018179768) SEMICONDUCTOR DEVICE

Pub. No.:    WO/2018/179768    International Application No.:    PCT/JP2018/002438
Publication Date: Fri Oct 05 01:59:59 CEST 2018 International Filing Date: Sat Jan 27 00:59:59 CET 2018
IPC: H01L 29/872
H01L 21/316
H01L 21/318
H01L 21/365
H01L 29/06
H01L 29/47
Applicants: TDK CORPORATION
TDK株式会社
Inventors: HIRABAYASHI Jun
平林 潤
FUJITA Minoru
藤田 実
FUKUMITSU Yoshiaki
福光 由章
Title: SEMICONDUCTOR DEVICE
Abstract:
[Problem] To provide a semiconductor device of a vertical structure that prevents leakage current along a side surface and cracking, chipping, cleavage, and the like on the side surface. [Solution] Provided are: a semiconductor layer 20 comprising a first and second electrode formation surface 20a, 20b and a side surface 20c; an anode electrode 40 formed on the first electrode formation surface 20a; a cathode electrode 50 formed on the second electrode formation surface 20b; and an insulating film 30 that is formed continuously, spanning from the first electrode formation surface 20a to the side surface 20c so as to cover a first edge E1. According to the present invention, the side surface 20c of the semiconductor layer 20 is covered with the insulating film 30, and therefore leakage current along the side surface 20c is reduced. Moreover, the side surface 20c is protected by the insulating film 30, and therefore cracking, chipping, cleavage, and the like on the side surface 20c are prevented.