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|1. (WO2018179768) SEMICONDUCTOR DEVICE|
[Problem] To provide a semiconductor device of a vertical structure that prevents leakage current along a side surface and cracking, chipping, cleavage, and the like on the side surface. [Solution] Provided are: a semiconductor layer 20 comprising a first and second electrode formation surface 20a, 20b and a side surface 20c; an anode electrode 40 formed on the first electrode formation surface 20a; a cathode electrode 50 formed on the second electrode formation surface 20b; and an insulating film 30 that is formed continuously, spanning from the first electrode formation surface 20a to the side surface 20c so as to cover a first edge E1. According to the present invention, the side surface 20c of the semiconductor layer 20 is covered with the insulating film 30, and therefore leakage current along the side surface 20c is reduced. Moreover, the side surface 20c is protected by the insulating film 30, and therefore cracking, chipping, cleavage, and the like on the side surface 20c are prevented.