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1. (WO2018179742) TANTALUM SPUTTERING TARGET
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/179742 International Application No.: PCT/JP2018/002154
Publication Date: 04.10.2018 International Filing Date: 24.01.2018
IPC:
C23C 14/34 (2006.01) ,C22C 27/02 (2006.01) ,H01L 21/285 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
34
Sputtering
C CHEMISTRY; METALLURGY
22
METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
C
ALLOYS
27
Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/ or C22C16/130
02
Alloys based on vanadium, niobium or tantalum
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28
Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
283
Deposition of conductive or insulating materials for electrodes
285
from a gas or vapour, e.g. condensation
Applicants: JX NIPPON MINING & METALS CORPORATION[JP/JP]; 1-2,Otemachi 1-chome,Chiyoda-ku, Tokyo 1008164, JP
Inventors: NAGATSU,Kotaro; JP
Agent: AXIS PATENT INTERNATIONAL; Shimbashi i-mark Bldg., 6-2 Shimbashi 2-Chome, Minato-ku, Tokyo 1050004, JP
Priority Data:
2017-06848930.03.2017JP
Title (EN) TANTALUM SPUTTERING TARGET
(FR) CIBLE DE PULVÉRISATION DE TANTALE
(JA) タンタルスパッタリングターゲット
Abstract:
(EN) Provided is a tantalum sputtering target that contributes to improvements in film thickness uniformity during high power sputtering. The tantalum sputtering target has a purity of 99.99% by mass or greater and an average value for Vickers hardness for the sputtering surface of 85 – 110 Hv and satisfies both of the following conditions (1) and (2). (1) When EBSP measurements are made of a cross-section perpendicular to the sputtering surface, the average of the kernel average misorientation (KAM) values is 0.2 – 2.8°. (2) When EBSP measurements are made of a cross-section perpendicular to the sputtering surface, the average value of the {100} plane oriented surface area ratio for which misorientation to the direction of the normal line to the sputtering surface oriented within 15° is 20% or greater.
(FR) L'invention concerne une cible de pulvérisation de tantale qui contribue à des améliorations de l'uniformité de l'épaisseur du film pendant une pulvérisation à haute puissance. La cible de pulvérisation de tantale présente une pureté supérieure ou égale à 99,99 % en masse et une valeur moyenne pour la dureté Vickers pour la surface de pulvérisation de 85 à 110 Hv, et satisfait les deux conditions suivantes (1) et (2). (1) Lorsque des mesures EBSP sont effectuées d'une section transversale perpendiculaire à la surface de pulvérisation, la moyenne des valeurs de la désorientation moyenne par noyau (KAM) est de 0,2 à 2,8°. (2) Lorsque des mesures EBSP sont effectuées d'une section transversale perpendiculaire à la surface de pulvérisation, la valeur moyenne du rapport de surface orientée dans le plan {100} pour ladite désorientation relativement à la direction de la ligne normale à la surface de pulvérisation orientée dans 15° est supérieure ou égale à 20 %.
(JA) ハイパワースパッタ時の膜厚均一性を向上させるのに寄与するタンタルスパッタリングターゲットを提供する。純度が99.99質量%以上、スパッタリング面のビッカース硬さの平均値が85~110Hvであり、且つ、次の(1)~(2)のうち両方の条件を満たすタンタルスパッタリングターゲット。 (1)スパッタリング面に垂直な断面をEBSP測定したとき、局所角度方位差(KAM値)の平均値が0.2°~2.8°である。 (2)スパッタリング面に垂直な断面をEBSP測定したとき、スパッタリング面の法線方向に対する方位差が15°以内で配向した{100}面の配向面積率の平均値が20%以上である。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)