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|1. (WO2018179660) MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY|
|Title:||MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY|
Provided are a magnetoresistance effect element and a magnetic memory. The direction of magnetization of a storage layer is vertical with respect to a film surface in the magnetoresistance effect element, which has a high thermal stability index. The storage layer, which has the configuration of first magnetic layer/first nonmagnetic binding layer/first magnetic insertion layer/second nonmagnetic binding layer/second magnetic layer, is laminated between the first and second nonmagnetic layers such that a magnetic binding force is produced between the first magnetic layer and the second magnetic layer.