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1. (WO2018179660) MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY

Pub. No.:    WO/2018/179660    International Application No.:    PCT/JP2017/047323
Publication Date: Fri Oct 05 01:59:59 CEST 2018 International Filing Date: Fri Dec 29 00:59:59 CET 2017
IPC: H01L 43/08
H01L 21/8239
H01L 27/105
Applicants: TOHOKU UNIVERSITY
国立大学法人東北大学
Inventors: NISHIOKA Koichi
西岡 浩一
ENDOH Tetsuo
遠藤 哲郎
IKEDA Shoji
池田 正二
HONJO Hiroaki
本庄 弘明
SATO Hideo
佐藤 英夫
OHNO Hideo
大野 英男
Title: MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
Abstract:
Provided are a magnetoresistance effect element and a magnetic memory. The direction of magnetization of a storage layer is vertical with respect to a film surface in the magnetoresistance effect element, which has a high thermal stability index. The storage layer, which has the configuration of first magnetic layer/first nonmagnetic binding layer/first magnetic insertion layer/second nonmagnetic binding layer/second magnetic layer, is laminated between the first and second nonmagnetic layers such that a magnetic binding force is produced between the first magnetic layer and the second magnetic layer.