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1. (WO2018179646) FAR-INFRARED IMAGING DEVICE
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Pub. No.: WO/2018/179646 International Application No.: PCT/JP2017/046665
Publication Date: 04.10.2018 International Filing Date: 26.12.2017
IPC:
G01J 1/02 (2006.01) ,G01J 1/42 (2006.01) ,G01J 1/44 (2006.01) ,H01L 27/144 (2006.01) ,H01L 27/146 (2006.01) ,H04N 5/33 (2006.01) ,H04N 5/374 (2011.01)
G PHYSICS
01
MEASURING; TESTING
J
MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
1
Photometry, e.g. photographic exposure meter
02
Details
G PHYSICS
01
MEASURING; TESTING
J
MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
1
Photometry, e.g. photographic exposure meter
42
using electric radiation detectors
G PHYSICS
01
MEASURING; TESTING
J
MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
1
Photometry, e.g. photographic exposure meter
42
using electric radiation detectors
44
Electric circuits
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144
Devices controlled by radiation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144
Devices controlled by radiation
146
Imager structures
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
N
PICTORIAL COMMUNICATION, e.g. TELEVISION
5
Details of television systems
30
Transforming light or analogous information into electric information
33
Transforming infra-red radiation
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
N
PICTORIAL COMMUNICATION, e.g. TELEVISION
5
Details of television systems
30
Transforming light or analogous information into electric information
335
using solid-state image sensors [SSIS]
369
SSIS architecture; Circuitry associated therewith
374
Addressed sensors, e.g. MOS or CMOS sensors
Applicants:
ソニーセミコンダクタソリューションズ株式会社 SONY SEMICONDUCTOR SOLUTIONS CORPORATION [JP/JP]; 神奈川県厚木市旭町四丁目14番1号 4-14-1, Asahi-cho, Atsugi-shi, Kanagawa 2430014, JP
Inventors:
原田 耕一 HARADA, Kouichi; JP
Agent:
亀谷 美明 KAMEYA, Yoshiaki; JP
金本 哲男 KANEMOTO, Tetsuo; JP
萩原 康司 HAGIWARA, Yasushi; JP
松本 一騎 MATSUMOTO, Kazunori; JP
Priority Data:
2017-06430729.03.2017JP
Title (EN) FAR-INFRARED IMAGING DEVICE
(FR) DISPOSITIF D'IMAGERIE INFRAROUGE LOINTAIN
(JA) 遠赤外線撮像装置
Abstract:
(EN) Provided is a far-infrared imaging device provided with a plurality of pixels disposed in a matrix, each row including first transistors having a first polarity and in which an electric current flowing therethrough is temperature-dependent, each row including first pixels not shielded from light and a single second pixel shielded from light and including a first transistor, and a difference electric current as the difference between an electric current of the first pixels and an electric current of the second pixel being outputted by row units.
(FR) L'invention concerne un dispositif d'imagerie infrarouge lointain comprenant une pluralité de pixels disposés dans une matrice, chaque ligne comprenant des premiers transistors présentant une première polarité et dans lesquels un courant électrique circulant à travers ces derniers est dépendant de la température, chaque ligne comprenant des premiers pixels non protégés de la lumière et un seul second pixel protégé de la lumière et comprenant un premier transistor, et un courant électrique de différence en tant que différence entre un courant électrique des premiers pixels et un courant électrique du second pixel étant émis par des unités de ligne.
(JA) 行列状に配置される複数の画素を備え、各行は、流れる電流が温度依存性を有し、第1の極性を有する第1のトランジスタを含み、遮光されない第1の画素と、第1のトランジスタを含み、遮光される、1つの第2の画素とを含み、行単位で、第1の画素の電流と第2の画素の電流との差分電流を出力する、遠赤外線撮像装置が、提供される。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)