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1. (WO2018179274) DRIVE CIRCUIT FOR POWER SEMICONDUCTOR ELEMENT, AND MOTOR DRIVE DEVICE

Pub. No.:    WO/2018/179274    International Application No.:    PCT/JP2017/013371
Publication Date: Fri Oct 05 01:59:59 CEST 2018 International Filing Date: Fri Mar 31 01:59:59 CEST 2017
IPC: H03K 17/08
H03K 17/687
Applicants: MITSUBISHI ELECTRIC CORPORATION
三菱電機株式会社
Inventors: TAKEZAWA, Ryuichi
竹澤 竜一
KONISHI, Keisuke
小西 恵介
Title: DRIVE CIRCUIT FOR POWER SEMICONDUCTOR ELEMENT, AND MOTOR DRIVE DEVICE
Abstract:
A drive circuit (100) for a power semiconductor element is provided with: a power semiconductor element (F1); a gate drive insulation power supply (1) for driving a gate (G) of the power semiconductor element (F1); a voltage increase prevention diode (D3), in which the anode is connected to the gate (G) of the power semiconductor element (F1); a forward bias power supply zener diode (ZD1), in which the cathode is connected to the cathode of the voltage increase prevention diode (D3), and the anode is connected to an emitter (E) of the power semiconductor element (F1); and a voltage adjustment diode (Dx), in which the cathode is connected to the cathode of the voltage increase prevention diode (D3) and the cathode of the forward bias power supply zener diode (ZD1), and the anode is connected to a positive electrode (11) of the gate drive insulation power supply (1).