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|1. (WO2018179251) METHOD FOR PRODUCING SEMICONDUCTOR DEVICE|
|Applicants:||HITACHI KOKUSAI ELECTRIC INC.
|Title:||METHOD FOR PRODUCING SEMICONDUCTOR DEVICE|
[Problem] To provide a cleaning technique by which a film such as a high dielectric constant oxide film that is difficult to etch by means of a fluorine-containing gas is able to be efficiently removed. [Solution] The present invention comprises: (a) a step for performing a pretreatment by supplying an oxidation gas into a processing chamber to which a high dielectric constant oxide film adheres; (b) a step for supplying a chlorine-based gas into the processing chamber at a first pressure; (c) a step for exhausting the processing chamber; (d) a step for supplying the oxidation gas into the processing chamber; (e) a step for supplying a chlorine-based gas into the processing chamber at a second pressure that is lower than the first pressure; and (f) a step for performing a post-treatment by supplying an oxygen-containing gas, which is different from the oxidation gas, into the processing chamber. By repeating the steps (b)-(e) a predetermined number of times, the high dielectric constant oxide film adhering to the interior of the processing chamber is etched.