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1. (WO2018179251) METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

Pub. No.:    WO/2018/179251    International Application No.:    PCT/JP2017/013319
Publication Date: Fri Oct 05 01:59:59 CEST 2018 International Filing Date: Fri Mar 31 01:59:59 CEST 2017
IPC: H01L 21/31
H01L 21/316
Applicants: HITACHI KOKUSAI ELECTRIC INC.
株式会社日立国際電気
Inventors: LI Gen
李 根
YAMAZAKI Hirohisa
山崎 裕久
NONOMURA Kazuki
野々村 一樹
SUZAKI Kenichi
寿崎 健一
TAKEBAYASHI Yuji
竹林 雄二
Title: METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Abstract:
[Problem] To provide a cleaning technique by which a film such as a high dielectric constant oxide film that is difficult to etch by means of a fluorine-containing gas is able to be efficiently removed. [Solution] The present invention comprises: (a) a step for performing a pretreatment by supplying an oxidation gas into a processing chamber to which a high dielectric constant oxide film adheres; (b) a step for supplying a chlorine-based gas into the processing chamber at a first pressure; (c) a step for exhausting the processing chamber; (d) a step for supplying the oxidation gas into the processing chamber; (e) a step for supplying a chlorine-based gas into the processing chamber at a second pressure that is lower than the first pressure; and (f) a step for performing a post-treatment by supplying an oxygen-containing gas, which is different from the oxidation gas, into the processing chamber. By repeating the steps (b)-(e) a predetermined number of times, the high dielectric constant oxide film adhering to the interior of the processing chamber is etched.