WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Options
Query Language
Stem
Sort by:
List Length
Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2018179240) ALUMINA CRYSTAL AND PRODUCTION PROCESS THEREFOR
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/179240 International Application No.: PCT/JP2017/013283
Publication Date: 04.10.2018 International Filing Date: 30.03.2017
IPC:
C30B 29/20 (2006.01)
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10
Inorganic compounds or compositions
16
Oxides
20
Aluminium oxides
Applicants: NGK INSULATORS, LTD.[JP/JP]; 2-56, Suda-cho, Mizuho-ku, Nagoya-city, Aichi 4678530, JP
Inventors: OKOCHI, Sota; JP
WATANABE, Morimichi; JP
YOSHIKAWA, Jun; JP
NANATAKI, Tsutomu; JP
Agent: ITEC INTERNATIONAL PATENT FIRM; SC Fushimi Bldg., 16-26, Nishiki 2-chome, Naka-ku, Nagoya-shi, Aichi 4600003, JP
Priority Data:
Title (EN) ALUMINA CRYSTAL AND PRODUCTION PROCESS THEREFOR
(FR) CRISTAL D'ALUMINE ET SON PROCÉDÉ DE PRODUCTION
(JA) アルミナ結晶及びその製法
Abstract:
(EN) The alumina crystal according to the present invention is of a single-crystal-like structure and includes a crystal face having an area size of at least 25 mm2, wherein the area proportion of impurities in the crystal face is at most 10%, and, in regions excluding where the impurities exist in the alumina crystal, F is contained in an amount of 10-300 atppm and Mg is contained in an amount of 10-250 atppm.
(FR) La présente invention concerne un cristal d'alumine qui est d'une structure de type monocristalline et qui comprend une face de cristal possédant une taille de surface d'au moins 25 mm2, la proportion surfacique d'impuretés dans la face de cristal étant d'au plus 10 %, et, dans des régions à l'exclusion de celles où les impuretés existent dans le cristal d'alumine, F étant contenu dans une quantité de 10 à 300 atppm et Mg étant contenu dans une quantité de 10 à 250 atppm.
(JA) 本発明のアルミナ結晶は、単結晶様のアルミナ結晶であって、面積が25mm2以上の結晶面を含み、前記結晶面における異物の面積比率が10%以下であり、前記アルミナ結晶のうち前記異物を除く領域にFを10~300atppm含み、Mgを10~250atppm含む。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)