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1. (WO2018177706) SILICON CARBIDE SUBSTRATE AND METHOD OF GROWING SiC SINGLE CRYSTAL BOULES

Pub. No.:    WO/2018/177706    International Application No.:    PCT/EP2018/055597
Publication Date: Fri Oct 05 01:59:59 CEST 2018 International Filing Date: Thu Mar 08 00:59:59 CET 2018
IPC: C30B 23/00
C30B 29/36
Applicants: SICRYSTAL GMBH
Inventors: VOGEL, Michael
ECKER, Bernhard
MÜLLER, Ralf
STOCKMEIER, Matthias
WEBER, Arnd-Dietrich
Title: SILICON CARBIDE SUBSTRATE AND METHOD OF GROWING SiC SINGLE CRYSTAL BOULES
Abstract:
The present invention relates to a silicon carbide (SiC) substrate with improved mechanical and electrical characteristics. Furthermore, the invention relates to a method for producing a bulk SiC crystal in a physical vapor transport growth system. The silicon carbide substrate comprises an inner region (102) which constitutes at least 30 % of a total surface area of said substrate (100), a ring shaped peripheral region (104) radially surrounding the inner region (102), wherein a mean concentration of a dopant in the inner region (102) differs by at maximum 5⋅1018 cm-3, preferably 1⋅1018 cm-3, from the mean concentration of this dopant in the peripheral region (104).