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1. (WO2018176589) MANUFACTURING METHOD OF TFT PANEL, AND TFT PANEL
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Pub. No.: WO/2018/176589 International Application No.: PCT/CN2017/084135
Publication Date: 04.10.2018 International Filing Date: 12.05.2017
IPC:
H01L 27/32 (2006.01) ,H01L 21/77 (2017.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28
including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
32
with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
Applicants:
深圳市华星光电技术有限公司 SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD. [CN/CN]; 中国广东省深圳市 光明新区塘明大道9-2号 No.9-2, Tangming Rd, Guangming New District Shenzhen, Guangdong 518132, CN
Inventors:
周星宇 ZHOU, Xingyu; CN
Agent:
深圳市威世博知识产权代理事务所(普通合伙) CHINA WISPRO INTELLECTUAL PROPERTY LLP.; 中国广东省深圳市 南山区高新区粤兴三道8号中国地质大学产学研基地中地大楼A806 Room A806 Zhongdi Building, China University of Geosciences Base, No.8 Yuexing 3rd Road High-Tech Industrial Estate, Nanshan District Shenzhen, Guangdong 518057, CN
Priority Data:
201710203707.630.03.2017CN
Title (EN) MANUFACTURING METHOD OF TFT PANEL, AND TFT PANEL
(FR) PROCÉDÉ DE FABRICATION D'UN PANNEAU TFT, ET PANNEAU TFT
(ZH) 一种TFT背板的制作方法及TFT背板
Abstract:
(EN) A manufacturing method of a TFT panel, and TFT panel. The method comprises: providing a substrate (101); forming, on the substrate, a first active region, a first oxide layer, a nitride layer, and a first and second mutually independent gate sequentially (102, 103, 104); removing the nitride layer not covered by the first and second gate (105); depositing a second insulation layer (106); forming, on the second insulation layer above the second gate, a second active region having a different material than the material of the first active region (107); and forming a first and second source, and a first and second drain separately (108). The method improves the performance of a TFT panel.
(FR) La présente invention concerne un procédé de fabrication d'un panneau TFT, et un panneau TFT. Le procédé consiste : à fournir un substrat; à former, sur le substrat, une première région active, une première couche d'oxyde, une couche de nitrure, et une première et une seconde grilles mutuellement indépendantes séquentiellement (102, 103, 104); à retirer la couche de nitrure non recouverte par les première et seconde grilles (105); à déposer une seconde couche d'isolation (106); à former, sur la seconde couche d'isolation au-dessus de la seconde grille, une seconde région active ayant un matériau différent du matériau de la première région active (107); et à former une première et une seconde source, et un premier et un second drain séparément (108). Le procédé améliore les performances panneau TFT.
(ZH) 一种TFT背板的制作方法及TFT背板。该方法包括:准备基板(101);在基板上依次形成第一活性区、第一氧化物层、氮化物层、及相互独立的第一、第二栅极(102,103,104);去除第一、第二栅极覆盖不到的氮化物层(105);沉积第二绝缘层(106);在第二栅极上方的第二绝缘层上形成与第一活性区的材质不同的第二活性区(107);分别形成第一、第二源电极、第一、第二漏电极(108)。该方法能够提高该TFT背板的性能。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)