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1. (WO2018176568) MANUFACTURING METHOD OF TFT SUBSTRATE

Pub. No.:    WO/2018/176568    International Application No.:    PCT/CN2017/082815
Publication Date: Fri Oct 05 01:59:59 CEST 2018 International Filing Date: Thu May 04 01:59:59 CEST 2017
IPC: H01L 21/84
Applicants: SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
深圳市华星光电半导体显示技术有限公司
Inventors: ZHOU, Zhichao
周志超
Title: MANUFACTURING METHOD OF TFT SUBSTRATE
Abstract:
A manufacturing method for a TFT substrate, comprising: forming, by means of a first mask process and on a substrate (11), a buffer layer (12), a data line (104), a source (105), a first scan line (101), a second scan line (102), and a gate (103); forming, by means of a second mask process and on the substrate (11), a first insulation layer (151), a second insulation layer (152), a first semiconductor layer (171A), and a second semiconductor layer (172); and forming, by means of a third mask process and on the substrate (11), a first conductor layer (171B), an electrical connection portion (191), and a drain (192).