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1. (WO2018176548) MANUFACTURING METHOD FOR HUMIDITY SENSOR, AND HUMIDITY SENSOR MANUFACTURED BY USING METHOD

Pub. No.:    WO/2018/176548    International Application No.:    PCT/CN2017/082345
Publication Date: Fri Oct 05 01:59:59 CEST 2018 International Filing Date: Sat Apr 29 01:59:59 CEST 2017
IPC: G01N 27/22
Applicants: SHANGHAI SENSYLINK MICROELECTRONICS CO., LTD.
上海申矽凌微电子科技有限公司
Inventors: LAI, John Jianwen
赖建文
Title: MANUFACTURING METHOD FOR HUMIDITY SENSOR, AND HUMIDITY SENSOR MANUFACTURED BY USING METHOD
Abstract:
A manufacturing method for a humidity sensor, and the humidity sensor manufactured by using the method. The method comprises the following steps: forming a conductive zero layer (2) on a silicon wafer substrate (1) by using an ion implantation method and high-temperature annealing; growing a first silicon oxide dielectric layer (3) on the conductive zero layer; forming a first contact hole (4) on the first silicon oxide dielectric layer; depositing a first metal thin film layer (5) on the first silicon oxide dielectric layer by using a physical vapor deposition method, the first metal thin film layer being connected to the conductive zero layer by means of the first contact hole; forming a heating resistor; depositing a second silicon oxide dielectric layer (6), and forming a second contact hole (7) penetrating through the second silicon oxide dielectric layer; depositing a second metal thin film layer (8), the second and first metal thin film layers being connected by means of the second contact hole; forming an interdigital capacitor; depositing a third silicon oxide dielectric layer (9); and coating a humidity-sensitive polyimide thin film material (10). The heating resistor can heat a humidity-sensitive capacitor and evaporate redundant water, so that the humidity sensor restores normal functions.