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1. (WO2018176537) FIELD-EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREFOR

Pub. No.:    WO/2018/176537    International Application No.:    PCT/CN2017/081774
Publication Date: Fri Oct 05 01:59:59 CEST 2018 International Filing Date: Wed Apr 26 01:59:59 CEST 2017
IPC: H01L 21/336
H01L 29/78
H01L 29/12
H01L 29/16
Applicants: SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
深圳市华星光电半导体显示技术有限公司
Inventors: XIE, Huafei
谢华飞
Title: FIELD-EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREFOR
Abstract:
Provided are a field effect transistor and a manufacturing method therefor. The method comprising: depositing a first insulation layer on a substrate (S11); forming a source electrode and a drain electrode on the first insulation layer (S12); forming a carbon quantum dot active layer covering the source electrode and the drain electrode (S13); and successively forming a second insulation layer and a gate electrode on the carbon quantum dot active layer (S14). By means of the method, a carbon quantum dot material is used to manufacture an active layer in a field-effect transistor, such that the manufacturing material for the field-effect transistor is enriched, the environmental pollution created when a metal point film layer is used to manufacture the active layer in the art is reduced, and the dependency on metal elements is reduced at the same time.