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1. (WO2018176302) METHOD AND APPARATUS FOR PREPARING SIC RAW MATERIAL FOR GROWING SIC CRYSTAL

Pub. No.:    WO/2018/176302    International Application No.:    PCT/CN2017/078726
Publication Date: Fri Oct 05 01:59:59 CEST 2018 International Filing Date: Fri Mar 31 01:59:59 CEST 2017
IPC: C30B 29/36
C30B 23/06
Applicants: XINJIANG TANKEBLUE SEMICONDUCTOR CO. LTD
新疆天科合达蓝光半导体有限公司
TANKEBLUE SEMICONDUCTOR CO. LTD
北京天科合达半导体股份有限公司
Inventors: PENG, Tonghua
彭同华
LIU, Chunjun
刘春俊
WANG, Bo
王波
ZHANG, Ping
张平
ZOU, Yu
邹宇
ZHAO, Ning
赵宁
Title: METHOD AND APPARATUS FOR PREPARING SIC RAW MATERIAL FOR GROWING SIC CRYSTAL
Abstract:
Provided are a method and apparatus for preparing a SiC raw material for growing a SiC crystal. The method comprises: loading SiC powder into a first graphite crucible, and installing, in an inverted manner, a second graphite crucible on the first graphite crucible; and putting the two graphite crucibles, which have been installed, in a heating apparatus, evacuating the heating apparatus and raising the temperature to a pre-set temperature, wherein the first graphite crucible is located in a relatively high temperature region, the second graphite crucible is located in a relatively low temperature region, and the SiC powder is sublimated and transported to the second graphite crucible, and is crystallized to obtain a crystalline SiC raw material to be used for growing a SiC crystal. The apparatus comprises a first graphite crucible, a second graphite crucible and a heating apparatus; furthermore, a separator is arranged, in an upward manner, at the bottom of the second graphite crucible, wherein the separator is spaced apart from the side wall of the second graphite crucible by a predetermined distance. The method and the apparatus can reduce the amount of impurities in a SiC crystal prepared from this raw material, reduce microscopic inclusions, reduce dislocation density, and provide the growth rate and yield of the SiC crystal in the middle and later stages.