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1. (WO2018167011) METHOD FOR PRODUCING LIGHT-EMITTING DIODES AND LIGHT-EMITTING DIODE

Pub. No.:    WO/2018/167011    International Application No.:    PCT/EP2018/056158
Publication Date: Fri Sep 21 01:59:59 CEST 2018 International Filing Date: Wed Mar 14 00:59:59 CET 2018
IPC: H01L 33/22
Applicants: OSRAM OPTO SEMICONDUCTORS GMBH
Inventors: GALLER, Bastian
OFF, Jürgen
Title: METHOD FOR PRODUCING LIGHT-EMITTING DIODES AND LIGHT-EMITTING DIODE
Abstract:
The invention relates to a method which is designed for producing light-emitting diodes and comprises the following steps in the order specified: A) growing an n-conducting n-layer (22), B) growing an active zone (23) to produce ultraviolet radiation, C) growing a p-conducting p-layer (24), D) producing a p-conducting semiconductor contact layer (25) having a varying thickness and having a plurality of thickness maxima (4) directly on the p-layer (24), and E) applying an Ohmic-conducting electrode layer (3) directly on the semiconductor contact layer (25), wherein - the n-layer (22) and the active zone (23) are both based on AlGaN and the p-layer (24) is based on AlGaN or InGaN, and the semiconductor contact layer (25) is a GaN layer, and - the thickness maxima (4) in plan view have an area concentration of at least 104 cm-2.