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1. (WO2018166428) QUANTUM DOT SOLID-STATE FILM AND METHOD FOR PREPARING SAME, AND QUANTUM DOT LIGHT-EMITTING DIODE

Pub. No.:    WO/2018/166428    International Application No.:    PCT/CN2018/078777
Publication Date: Fri Sep 21 01:59:59 CEST 2018 International Filing Date: Wed Mar 14 00:59:59 CET 2018
IPC: H01L 51/56
Applicants: TCL CORPORATION
TCL集团股份有限公司
Inventors: CHENG, Luling
程陆玲
YANG, Yixing
杨一行
Title: QUANTUM DOT SOLID-STATE FILM AND METHOD FOR PREPARING SAME, AND QUANTUM DOT LIGHT-EMITTING DIODE
Abstract:
Disclosed are a quantum dot solid-state film and a method for preparing same, and a quantum dot light-emitting diode. The method comprises the steps of: providing a quantum dot solution, and preparing a quantum dot material solid-state film on a substrate; immersing the quantum dot material solid-state film in a surface modifier solution to obtain a quantum dot material solid-state film modified by a surface modifier; providing a metal nano particle seed solution, and using a solution method to deposit the metal nano particle seed solution on the quantum dot material solid-state film modified by the surface modifier to obtain a quantum dot material solid-state film with the surface having adsorbed a layer of metal nano particle seed; and providing a metal nano wire precursor solution, and immersing the quantum dot material solid-state film having adsorbed a layer of metal nano particle seed in the metal nano wire precursor solution to perform metal nano wire growth, so as to obtain a quantum dot solid-state film. The quantum dot solid-state film obtained using the method of the present invention can effectively and rapidly transmit electrical charges, while also improving the overall performance of a device.