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1. (WO2018166027) PHOTOMASK STRUCTURE AND COA-TYPE ARRAY SUBSTRATE
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Pub. No.: WO/2018/166027 International Application No.: PCT/CN2017/080735
Publication Date: 20.09.2018 International Filing Date: 17.04.2017
IPC:
G03F 7/20 (2006.01) ,H01L 27/12 (2006.01)
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20
Exposure; Apparatus therefor
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12
the substrate being other than a semiconductor body, e.g. an insulating body
Applicants: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.[CN/CN]; Building C5, Biolake of Optics Valley, No.666 Gaoxin Avenue, Wuhan East Lake High-tech Development Zone Wuhan, Hubei 430070, CN
Inventors: SUN, Tao; CN
Agent: COMIPS INTELLECTUAL PROPERTY OFFICE; Room 15E, Shenkan Building, Shangbu Zhong Road, Futian District Shenzhen, Guangdong 518028, CN
Priority Data:
201710146792.713.03.2017CN
Title (EN) PHOTOMASK STRUCTURE AND COA-TYPE ARRAY SUBSTRATE
(FR) STRUCTURE DE PHOTOMASQUE ET SUBSTRAT MATRICIEL DE TYPE COA
(ZH) 光罩结构及COA型阵列基板
Abstract:
(EN) A photomask structure and a COA-type array substrate. The photomask structure comprises: a central light-shading part (1); a peripheral light-shading part (3) surrounding the central light-shading part and shaped to conform to the outer profile of the central light-shading part; and an annular hollowed-out slit (5) sandwiched between the peripheral light-shading part and the central light-shading part. When passing through the hollowed-out slit, an exposure light is diffracted to generate a counter-propagating bent and scattered light and a gradual change in energy intensity; and the gradient of via holes of the finally prepared color film can be reduced when a negative photoresistance is cooperatively used, thus improving the electric connection quality between a pixel electrode and a signal line of a metal material and avoiding an undesired displaying effect.
(FR) L'invention concerne une structure de photomasque et un substrat matriciel de type COA. La structure de photomasque comprend : une partie de nuançage de lumière centrale (1) ; une partie de nuançage de lumière périphérique (3) entourant la partie de nuançage de lumière centrale et façonnée pour se conformer au profil extérieur de la partie de nuançage de lumière centrale ; et une fente annulaire évidée (5) prise en sandwich entre la partie de nuançage de lumière périphérique et la partie de nuançage de lumière centrale. Lors du passage à travers la fente évidée, une lumière d'exposition est diffractée pour produire une lumière courbée et diffusée de contre-propagation et un changement progressif d'intensité d'énergie ; et le gradient de trous d'interconnexion du film coloré préparé au final peut être réduit lorsqu'une photorésistance négative est utilisée conjointement, ce qui améliore la qualité de connexion électrique entre une électrode de pixel et une ligne de signal d'un matériau métallique et évite un effet d'affichage indésirable.
(ZH) 一种光罩结构及COA型阵列基板,该光罩结构包括中心遮光部(1)、包围中心遮光部并与中心遮光部的外轮廓形状一致的外围遮光部(3)、以及夹在外围遮光部与中心遮光部之间的环形的镂空狭缝(5),曝光光线经过镂空狭缝会发生衍射,产生传播反向的弯散及能量强度的渐变,配合负性光阻,能够使得最终制得的彩膜层过孔的坡度变缓,从而改善像素电极和金属材质的信号线之间的电连接质量,避免出现显示不良。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)