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1. (WO2018165910) POROUS GALLIUM NITRIDE SINGLE CRYSTAL MATERIAL, PREPARATION METHOD THEREFOR AND USE THEREOF
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Pub. No.: WO/2018/165910 International Application No.: PCT/CN2017/076791
Publication Date: 20.09.2018 International Filing Date: 15.03.2017
IPC:
C30B 25/02 (2006.01) ,C30B 29/40 (2006.01) ,H01L 21/205 (2006.01)
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25
Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
02
Epitaxial-layer growth
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10
Inorganic compounds or compositions
40
AIIIBV compounds
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205
using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
Applicants: FUJIAN INSTITUTE OF RESEARCH ON THE STRUCTURE OF MATTER, CHINESE ACADEMY OF SCIENCES[CN/CN]; 155 Yangqiao Road West, Gulou District Fuzhou, Fujian 350002, CN
Inventors: CHEN, Chenlong; CN
XIE, Kui; CN
Agent: PERIODIC LAW FIRM; B-1713 Deshengkaixuan Building, NO. 36 Deshengmenwai Street, Xicheng District Beijing 100088, CN
Priority Data:
201710146131.413.03.2017CN
Title (EN) POROUS GALLIUM NITRIDE SINGLE CRYSTAL MATERIAL, PREPARATION METHOD THEREFOR AND USE THEREOF
(FR) MATÉRIAU MONOCRISTALLIN DE NITRURE DE GALLIUM POREUX, PROCÉDÉ DE PRÉPARATION ET UTILISATION ASSOCIÉS
(ZH) 多孔氮化镓单晶材料、其制备方法及应用
Abstract:
(EN) Disclosed is a porous gallium nitride single crystal material, characterized in that the porous gallium nitride single crystal material contains pores with sizes ranging from 10 nm to 2000 nm. The material has a self-supporting structure, and where same is a bulk single crystal, the material serves as an epitaxial substrate for a gallium nitride-based device, and can serve the function of stress relief and dislocation annihilation, and is more advantageous than non-porous gallium nitride single crystal substrates. Moreover, the material can also provide a high-quality template for 3D optoelectronic devices.
(FR) L'invention concerne un matériau monocristallin de nitrure de gallium poreux, caractérisé en ce que le matériau monocristallin de nitrure de gallium poreux contient des pores ayant des tailles allant de 10 nm à 2000 nm. Le matériau a une structure autoportante, et lorsqu'il est un monocristal en vrac, le matériau sert de substrat épitaxial pour un dispositif à base de nitrure de gallium, et peut remplir la fonction de soulagement de contrainte et d'annihilation de dislocations. Il est en outre plus avantageux que les substrats monocristallins de nitrure de gallium non poreux. De plus, le matériau peut également fournir un modèle de haute qualité pour des dispositifs optoélectroniques 3D.
(ZH) 一种多孔氮化镓单晶材料,其特征在于,所述多孔氮化镓单晶材料中含有孔径为10nm~2000nm的孔。该材料具有自支撑结构,为块状单晶时,作为氮化镓基器件的外延衬底,可以起到应力释放和差排消解的作用,比无孔氮化镓单晶衬底相较更具优势。此外,该晶体材料还可为3D光电器件提供优质的模板。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)