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1. (WO2018165832) CMOS IMAGE SENSOR

Pub. No.:    WO/2018/165832    International Application No.:    PCT/CN2017/076510
Publication Date: Fri Sep 21 01:59:59 CEST 2018 International Filing Date: Tue Mar 14 00:59:59 CET 2017
IPC: H04N 5/335
Applicants: HUAWEI TECHNOLOGIES CO., LTD.
Inventors: MONOI, Makoto
Title: CMOS IMAGE SENSOR
Abstract:
A CMOS image sensor includes: a PD, an anode of which is connected to a ground, and a cathode of which is connected to a source of a TG; an FD; a Ca; the TG, the source of which is connected to the cathode of the PD, and a drain of which is connected to the FD; an SW, a source of which is connected to a power source voltage, and a drain of which is connected to a source of an RS and the Ca; the RS, the source of which is connected to the drain of the SW and the Ca, and a drain of which is connected to the FD; an AMP, a gate of which is connected to the FD, a source of which is connected to the power source voltage, wherein the PD is arranged in a first row on a substrate, any of the AMP, SW, and RS is arranged in a second row on the substrate, and the rest of the AMP, SW, and RS are arranged in a third row on the substrate. The CMOS image sensor achieves to shrink the pixel size of a high dynamic range pixel.