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1. (WO2018165598) SELECTIVE GROWTH OF SILICON OXIDE OR SILICON NITRIDE ON SILICON SURFACES IN THE PRESENCE OF SILICON OXIDE

Pub. No.:    WO/2018/165598    International Application No.:    PCT/US2018/021823
Publication Date: Fri Sep 14 01:59:59 CEST 2018 International Filing Date: Sat Mar 10 00:59:59 CET 2018
IPC: H01L 21/02
Applicants: LAM RESEARCH CORPORATION
Inventors: SMITH, David Charles
HAUSMANN, Dennis M.
Title: SELECTIVE GROWTH OF SILICON OXIDE OR SILICON NITRIDE ON SILICON SURFACES IN THE PRESENCE OF SILICON OXIDE
Abstract:
Methods and apparatuses for selectively depositing silicon-containing dielectric or metal-containing dielectric material on silicon or metal surfaces selective to silicon oxide or silicon nitride materials are provided herein. Methods involve exposing the substrate to an acyl chloride which is reactive with the silicon oxide or silicon nitride material where deposition is not desired to form a ketone structure that blocks deposition on the silicon oxide or silicon nitride material. Exposure to the acyl chloride is performed prior to deposition of the desired silicon-containing dielectric material or metal-containing dielectric material.