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1. (WO2018165055) VAPOR-PHASE DEPOSITION OF GERMANIUM NANOSTRUCTURES ON SUBSTRATES USING SOLID-PHASE GERMANIUM SOURCES

Pub. No.:    WO/2018/165055    International Application No.:    PCT/US2018/020983
Publication Date: Fri Sep 14 01:59:59 CEST 2018 International Filing Date: Tue Mar 06 00:59:59 CET 2018
IPC: C23C 16/44
C23C 14/00
C23C 14/22
C23C 14/24
C23C 16/00
Applicants: CSUB AUXILIARY FOR SPONSORED PROGRAMS ADMINISTRATION
LI, Yize, Stephanie
NGUYEN, John
Inventors: LI, Yize, Stephanie
NGUYEN, John
Title: VAPOR-PHASE DEPOSITION OF GERMANIUM NANOSTRUCTURES ON SUBSTRATES USING SOLID-PHASE GERMANIUM SOURCES
Abstract:
A method of depositing germanium on one or more substrates is disclosed. The method includes placing a source of germanium and the substrate(s) in a vapor deposition system, and heating the source of germanium in the vapor deposition system at a temperature near, at or above a melting point of elemental germanium, while flowing an inert gas over the source of germanium towards the substrate(s) for a length of time sufficient to deposit the germanium onto the substrate(s). The source of germanium is in the solid phase at ambient or room temperature. The substrate(s) may be or include one or more silicon or silicon- coated substrates, gallium nitride substrates or silicon dioxide-based substrates. The method may further include cleaning the source of germanium and the substrate(s) prior to placing the source of germanium and the substrate(s) in the vapor deposition system. The source of germanium may be elemental germanium.