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1. (WO2018164751) STACKED PA POWER CONTROL
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Pub. No.: WO/2018/164751 International Application No.: PCT/US2017/068052
Publication Date: 13.09.2018 International Filing Date: 21.12.2017
Chapter 2 Demand Filed: 26.09.2018
IPC:
H03F 1/22 (2006.01) ,H03F 3/195 (2006.01) ,H03F 3/24 (2006.01) ,H03G 1/00 (2006.01) ,H03F 1/02 (2006.01)
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
F
AMPLIFIERS
1
Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
08
Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
22
by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
F
AMPLIFIERS
3
Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
189
High-frequency amplifiers, e.g. radio frequency amplifiers
19
with semiconductor devices only
195
in integrated circuits
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
F
AMPLIFIERS
3
Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
20
Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
24
of transmitter output stages
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
G
CONTROL OF AMPLIFICATION
1
Details of arrangements for controlling amplification
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
F
AMPLIFIERS
1
Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
02
Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
Applicants:
PSEMI CORPORATION [US/US]; 9380 Carroll Park Drive San Diego, CA 92121, US
Inventors:
KOVAC, David; US
Agent:
CASH, Brian, J.; US
STEINFL, Alessandro; US
BRUNO, Enrica; US
PEREZ, Ronald, E.; US
DONG, Lun-Cong; US
XU, Jiancong; US
LOOK, Vincent; US
Priority Data:
15/451,18406.03.2017US
Title (EN) STACKED PA POWER CONTROL
(FR) COMMANDE DE PUISSANCE DE PA EMPILÉE
Abstract:
(EN) Systems, methods and apparatus for efficient power control of an RF amplifier for amplification of a constant envelope RF signal are described. A reduction in a size of a pass device of an LDO regulator is obtained by removing the pass device of the LDO regulator from a main current conduction path of the RF amplifier. Power control is provided by varying one or more gate voltages to cascoded transistors of a transistor stack of the RF amplifier according to a power control voltage. Various configurations for controlling the gate voltages are presented by way of a smaller size LDO regulator or by completely removing the LDO regulator. In a case where a supply voltage to the transistor stack varies, such as in a case of a battery, a compensation circuit is used to adjust the power control voltage in view of a variation of the supply voltage, and therefore null a corresponding drift in output power of the RF amplifier.
(FR) L'invention concerne des systèmes, des procédés et un appareil pour une commande de puissance efficace d'un amplificateur RF pour l'amplification d'un signal RF à enveloppe constante. Une réduction de la taille d'un dispositif de passage d'un régulateur LDO est obtenue en retirant le dispositif de passage du régulateur LDO d'un trajet de conduction de courant principal de l'amplificateur RF. Une commande de puissance est fournie en faisant varier une ou plusieurs tensions de grille à des transistors cascodés d'une pile de transistors de l'amplificateur RF en fonction d'une tension de commande de puissance. Diverses configurations pour commander les tensions de grille sont présentées au moyen d'un régulateur LDO de petite taille ou par élimination complète du régulateur LDO. Dans un cas où une tension d'alimentation de l'empilement de transistors varie, comme dans le cas d'une batterie, un circuit de compensation est utilisé pour ajuster la tension de commande de puissance en vue d'une variation de la tension d'alimentation, et donc nul une dérive correspondante de la puissance de sortie de l'amplificateur RF.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)