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1. (WO2018164744) WORD LINE VOLTAGE DETECTION FOR SELECTION OF READ VOLTAGES IN NON-VOLATILE MEMORY

Pub. No.:    WO/2018/164744    International Application No.:    PCT/US2017/063670
Publication Date: Fri Sep 14 01:59:59 CEST 2018 International Filing Date: Thu Nov 30 00:59:59 CET 2017
IPC: G11C 8/08
G11C 16/08
G11C 29/02
Applicants: SANDISK TECHNOLOGIES LLC
Inventors: DUTTA, Deepanshu
ALROD, Idan
TSENG, Huai-Yuan
DESAI, Amul
WAN, Jun
CHEAH, Ken
PUTHENTHERMADAM, Sarath
Title: WORD LINE VOLTAGE DETECTION FOR SELECTION OF READ VOLTAGES IN NON-VOLATILE MEMORY
Abstract:
Techniques are provided for improving the accuracy of read operations of memory cells, where the threshold voltage of the memory cells can shift depending on the coupled up state of the word lines. In one approach, for a read operation, a representative word line voltage in a block is detected and a corresponding set of read voltages is selected based on an evaluation of the detected word line voltage. In another approach, a pre-read voltage pulse is applied to a selected word line in response to a read command, just prior to reading the selected cells. In another approach, a voltage pulse is periodically applied to each word line in a block to provide the word lines in a coupled up state. In another approach, a soft erase is performed after a read operation to prevent coupling up of the word lines.