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1. (WO2018164743) THREE-DIMENSIONAL MEMORY DEVICE WITH SHORT-FREE SOURCE SELECT GATE CONTACT VIA STRUCTURE AND METHOD OF MAKING THE SAME

Pub. No.:    WO/2018/164743    International Application No.:    PCT/US2017/063478
Publication Date: Fri Sep 14 01:59:59 CEST 2018 International Filing Date: Wed Nov 29 00:59:59 CET 2017
IPC: H01L 27/11565
H01L 27/1157
H01L 27/11573
H01L 27/11582
Applicants: SANDISK TECHNOLOGIES LLC
Inventors: ARIYOSHI, Junichi
Title: THREE-DIMENSIONAL MEMORY DEVICE WITH SHORT-FREE SOURCE SELECT GATE CONTACT VIA STRUCTURE AND METHOD OF MAKING THE SAME
Abstract:
Electrical short caused by misalignment of source select level contact via structure and support pillar structures can be prevented by modifying the pattern of the support pillar structures such that the support pillar structures are omitted from the area in which source select gate contact via structures are formed. The insulating layer at the level overlying the source select level electrically conductive layer can have a sufficient thickness to prevent deformation during formation of the backside recesses. A minimum lateral separation distance between the source select level contact via structure and the support pillar structures is greater than any minimum lateral separation distance between the word line level contact via structures and the support pillar structures.