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1. (WO2018164522) METHOD FOR MANUFACTURING ELECTRONIC DEVICE AND METHOD FOR REMOVING IMPURITY USING SAME
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/164522 International Application No.: PCT/KR2018/002798
Publication Date: 13.09.2018 International Filing Date: 09.03.2018
IPC:
H01L 51/00 (2006.01) ,H01L 21/322 (2006.01) ,H01L 51/05 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
322
to modify their internal properties, e.g. to produce internal imperfections
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05
specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
Applicants:
이화여자대학교 산학협력단 EWHA UNIVERSITY-INDUSTRY COLLABORATION FOUNDATION [KR/KR]; 서울시 서대문구 이화여대길 52 52, Ewhayeodae-gil Seodaemun-gu Seoul 03760, KR
Inventors:
이상욱 LEE, Sang Wook; KR
신동훈 SHIN, Dong Hoon; KR
Agent:
리앤목 특허법인 Y.P.LEE, MOCK & PARTNERS; 서울시 강남구 언주로 30길 13 대림아크로텔 12층 12F Daelim Acrotel, 13 Eonju-ro 30-gil Gangnam-gu, Seoul 06292, KR
Priority Data:
10-2017-003027109.03.2017KR
Title (EN) METHOD FOR MANUFACTURING ELECTRONIC DEVICE AND METHOD FOR REMOVING IMPURITY USING SAME
(FR) PROCÉDÉ DE FABRICATION D'UN DISPOSITIF ÉLECTRONIQUE ET PROCÉDÉ D'ÉLIMINATION D'IMPURETÉS L'UTILISANT
(KO) 전자장치 제조방법 및 이를 이용한 불순물 제거방법
Abstract:
(EN) Provided are a method for manufacturing an electronic device capable of efficiently utilizing a material and a method for removing impurities using same. The method for manufacturing an electronic device comprises the steps of: placing a transfer film on a plurality of functional layers which are positioned apart from each other on a source substrate; bringing a first transfer target into close contact with the lower surface of the transfer film by applying pressure to a portion of the transfer film that corresponds to the first transfer target from among the plurality of functional layers by using a probe; separating the transfer film from the source substrate in a state in which the first transfer target is in close contact with the lower surface; placing the transfer film on a target substrate in the state in which the first transfer target is in close contact with the lower surface; placing the first transfer target on the target substrate by applying pressure to a portion of the transfer film that corresponds to the first transfer target; and separating the transfer film from the target substrate in a state in which the first transfer target is positioned on the target substrate.
(FR) L'invention concerne un procédé de fabrication d'un dispositif électronique qui peut utiliser efficacement un matériau et un procédé d'élimination d'impuretés l'utilisant. Le procédé de fabrication d'un dispositif électronique comprend les étapes consistant : à placer un film de transfert sur une pluralité de couches fonctionnelles qui sont positionnées à distance les unes des autres sur un substrat source ; à amener une première cible de transfert en contact étroit avec une surface inférieure du film de transfert en appliquant une pression sur une partie du film de transfert qui correspond à la première cible de transfert parmi la pluralité de couches fonctionnelles au moyen d'une sonde ; à séparer le film de transfert du substrat source dans un état dans lequel la première cible de transfert est en contact étroit avec sa surface inférieure ; à placer le film de transfert sur un substrat cible dans l'état dans lequel la première cible de transfert est en contact étroit avec sa surface inférieure ; à placer le premier objet de transfert sur le substrat cible en appliquant une pression sur une partie du film de transfert qui correspond à la première cible de transfert ; et à séparer le film de transfert du substrat cible dans un état dans lequel la première cible de transfert est positionnée sur le substrat cible.
(KO) 본 발명은 효율적으로 물질을 활용할 수 있는 전자장치 제조방법 및 이를 이용한 불순물 제거방법을 위하여, 소스기판 상에 상호 이격되도록 위치한 복수개의 기능층들 상에 전사막을 위치시키는 단계와, 프로브를 이용해 복수개의 기능층들 중의 제1전사대상물에 대응하는 전사막의 부분에 압력을 인가하여 제1전사대상물을 전사막의 하면에 밀착시키는 단계와, 하면에 제1전사대상물이 밀착된 상태로 전사막을 소스기판으로부터 이격시키는 단계와, 하면에 제1전사대상물이 밀착된 상태로 전사막을 타겟기판 상에 위치시키는 단계와, 제1전사대상물에 대응하는 전사막의 부분에 압력을 인가하여 제1전사대상물을 타겟기판 상에 위치시키는 단계와, 제1전사대상물이 타겟기판 상에 위치한 상태로, 전사막을 타겟기판으로부터 이격시키는 단계를 포함하는, 전자장치 제조방법 및 이를 이용한 불순물 제거방법을 제공한다.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)