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1. (WO2018164388) PATTERN FORMING METHOD FOR LIQUID CRYSTAL ALIGNMENT OF ZENITHAL BI-STABLE LIQUID CRYSTAL PANEL, LIQUID CRYSTAL-ALIGNED SUBSTRATE INCLUDING PATTERN FORMED THEREBY, AND MASK SUBSTRATE USED IN FORMATION OF PATTERN
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Pub. No.: WO/2018/164388 International Application No.: PCT/KR2018/001898
Publication Date: 13.09.2018 International Filing Date: 13.02.2018
IPC:
G02F 1/1337 (2006.01)
G PHYSICS
02
OPTICS
F
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1
Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01
for the control of the intensity, phase, polarisation or colour
13
based on liquid crystals, e.g. single liquid crystal display cells
133
Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
1333
Constructional arrangements
1337
Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
Applicants:
주식회사 엘지화학 LG CHEM, LTD. [KR/KR]; 서울시 영등포구 여의대로 128 128, Yeoui-daero Yeongdeungpo-gu Seoul 07336, KR
Inventors:
추소영 CHOO, So Young; KR
이진수 LEE, Jin Soo; KR
허은규 HER, Eun Kyu; KR
신부건 SHIN, Bu Gon; KR
Agent:
특허법인 피씨알 PCR INTELLECTUAL PROPERTY LAW FIRM; 서울시 강남구 선릉로90길 70 인텔빌딩 6층 6F, Intel Building, 70, Seolleung-ro 90-gil Gangnam-gu, Seoul 06194, KR
Priority Data:
10-2017-002883907.03.2017KR
Title (EN) PATTERN FORMING METHOD FOR LIQUID CRYSTAL ALIGNMENT OF ZENITHAL BI-STABLE LIQUID CRYSTAL PANEL, LIQUID CRYSTAL-ALIGNED SUBSTRATE INCLUDING PATTERN FORMED THEREBY, AND MASK SUBSTRATE USED IN FORMATION OF PATTERN
(FR) PROCÉDÉ DE FORMATION D'UN MOTIF PERMETTANT L'ALIGNEMENT DE CRISTAUX LIQUIDES D'UN PANNEAU À CRISTAUX LIQUIDES BISTABLE ZÉNITHAL, SUBSTRAT À CRISTAUX LIQUIDES COMPRENANT UN MOTIF AINSI FORMÉ, ET SUBSTRAT DE MASQUE UTILISÉ DANS LA FORMATION D'UN MOTIF
(KO) 정점 쌍 안정 액정 패널의 액정 배향을 위한 패턴 형성방법, 이에 따라 형성된 패턴을 포함하는 액정 배향기판 및 상기 패턴의 형성에 사용된 마스크 기판
Abstract:
(EN) Disclosed are a pattern forming method for liquid crystal alignment of a zenithal bi-stable liquid crystal panel, a liquid crystal-aligned substrate including a pattern formed thereby, and a mask substrate used in the formation of the pattern, the method forming an asymmetric pattern on a liquid crystal-aligned film of a zenithal bi-stable liquid crystal panel so as to maintain liquid crystal orientation even at zero potential after a voltage is applied, thereby enabling unnecessary power consumption to be prevented or minimized.
(FR) L'invention concerne : un procédé de formation d'un motif permettant l'alignement de cristaux liquides d'un panneau à cristaux liquides bistable zénithal ; un substrat à cristaux liquides comprenant un motif ainsi formé ; et un substrat de masque utilisé dans la formation du motif, le procédé formant un motif asymétrique sur un film à cristaux liquides alignés d'un panneau à cristaux liquides bistable zénithal de façon à maintenir l'orientation de cristaux liquides même à un potentiel nul après application d'une tension, ce qui permet d'empêcher ou de réduire à un minimum la consommation d'énergie superflue.
(KO) 정점 쌍 안정 액정 패널(Zenithal Bi-stable liquid crystal panel)의 액정 배향막에 비대칭 패턴을 형성함으로써, 전압을 가한 후 영 전위(zero-potential)에서도 액정 방향이 유지되어 불필요한 전력 소모를 방지 또는 최소화 할 수 있는, 정점 쌍 안정 액정 패널의 액정 배향을 위한 패턴 형성방법, 이에 따라 형성된 패턴을 포함하는 액정 배향기판 및 상기 패턴의 형성에 사용된 마스크 기판이 개시된다.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)