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1. (WO2018164302) ELECTRON-EMITTING MATERIAL AND PREPARATION METHOD THEREFOR
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Pub. No.: WO/2018/164302 International Application No.: PCT/KR2017/002609
Publication Date: 13.09.2018 International Filing Date: 10.03.2017
IPC:
H01J 1/14 (2006.01) ,H01J 1/20 (2006.01) ,H01J 9/02 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
J
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
1
Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
02
Main electrodes
13
Solid thermionic cathodes
14
characterised by the material
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
J
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
1
Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
02
Main electrodes
13
Solid thermionic cathodes
20
Cathodes heated indirectly by an electric current; Cathodes heated by electron or ion bombardment
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
J
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
9
Apparatus or processes specially adapted for the manufacture of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
02
Manufacture of electrodes or electrode systems
Applicants:
성균관대학교산학협력단 RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY [KR/KR]; 경기도 수원시 장안구 서부로 2066 2066, Seobu-ro, Jangan-gu, Suwon-si Gyeonggi-do 16419, KR
Inventors:
김성웅 KIM, Sung-wng; KR
이규형 LEE, Kyu-hyoung; KR
강세황 KANG, Se-hwang; KR
Agent:
김인철 KIM, In-cheol; KR
Priority Data:
Title (EN) ELECTRON-EMITTING MATERIAL AND PREPARATION METHOD THEREFOR
(FR) MATÉRIAU ÉMETTEUR D'ÉLECTRONS ET PROCÉDÉ DE PRÉPARATION ASSOCIÉ
(KO) 전자방출 물질 및 이의 제조방법
Abstract:
(EN) The present invention relates to an electron-emitting material containing Hf and S and a preparation method therefor. An electron-emitting material of the present invention can increase emission currents even at a low driving voltage due to the low work function thereof, thus finding useful applications in FED and fluorescent tubes. The work function of Hf2+xS provided by the present invention does not depend largely on x and exhibits a value of about 2.7 eV. This is lower by 30 % or greater than that of the commercial electron-emitting materials MO and carbon, which are on a level of 4 eV. Thanks to the feature, the electron-emitting material, when applied to FED and fluorescent tubes, can elicit large emission currents at a low driving voltage without structurally modifying the preexisting devices.
(FR) La présente invention concerne un matériau émetteur d'électrons contenant Hf et S et concerne un procédé de préparation associé. Un matériau émetteur d'électrons de la présente invention peut augmenter les courants d'émission même à une faible tension d'attaque en raison de son faible travail d'extraction, ce qui permet de lui trouver des applications utiles dans des écrans à émission de champ (FED) et des tubes fluorescents. Le travail d'extraction de Hf2+xS fourni par la présente invention ne dépend pas largement de x et présente une valeur d'environ 2,7 eV. La valeur est inférieure de 30 % ou plus à la valeur des matériaux émetteurs d'électrons commerciaux MO et du carbone, qui est de l'ordre de 4 eV. Grâce à cette caractéristique, le matériau émetteur d'électrons, lorsqu'il est appliqué à des FED et à des tubes fluorescents, peut provoquer de grands courants d'émission à une faible tension d'attaque sans modifier structurellement les dispositifs préexistants.
(KO) 본 발명은 Hf 및 S를 포함하는 전자방출 물질 및 그 제조방법에 대한 것이다. 본 발명의 전자방출 물질은 낮은 일함수 특성으로 낮은 구동 전압에서 방출 전류를 크게 할 수 있어 FED 및 형광관에 유용하게 사용될 수 있다. 본 발명에서 제공되는 Hf2+xS의 일함수는 x에 크게 의존하지 않으며 약 2.7 eV의 값을 나타낸다. 이는 상용 전자방출 소재인 Mo 및 카본의 4 eV 수준의 일함수와 비교하여 30% 이상 낮은 특성으로, FED 및 형광관에 적용하면 기존 디바이스 구조의 변경 없이 낮은 구동 전압에서 큰 방출 전류를 얻을 수 있다.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)