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1. (WO2018164267) COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, RESIST UNDERLAYER FILM, METHOD FOR PRODUCING SAME, AND METHOD FOR PRODUCING PATTERNED SUBSTRATE

Pub. No.:    WO/2018/164267    International Application No.:    PCT/JP2018/009257
Publication Date: Fri Sep 14 01:59:59 CEST 2018 International Filing Date: Sat Mar 10 00:59:59 CET 2018
IPC: G03F 7/11
C08G 8/20
G03F 7/20
H01L 21/027
Applicants: JSR CORPORATION
JSR株式会社
Inventors: NOSAKA Naoya
野坂 直矢
WAKAMATSU Goji
若松 剛史
ABE Tsubasa
阿部 翼
MIURA Ichihiro
三浦 一裕
EHARA Kengo
江原 健悟
NAKATSU Hiroki
中津 大貴
NAKAGAWA Hiroki
中川 大樹
Title: COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, RESIST UNDERLAYER FILM, METHOD FOR PRODUCING SAME, AND METHOD FOR PRODUCING PATTERNED SUBSTRATE
Abstract:
The purpose of the present invention is to provide a composition for forming a resist underlayer film, which is capable of forming a resist underlayer film that has excellent flatness, while exhibiting excellent solvent resistance, heat resistance and etching resistance. The present invention is a composition for forming a resist underlayer film, which contains a compound that has a partial structure represented by formula (1) and a solvent. In formula (1), X represents a group represented by formula (i), (ii), (iii) or (iv). In formula (i), each of R1 and R2 independently represents a hydrogen atom, a hydroxy group, a substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1-20 carbon atoms or a substituted or unsubstituted aralkyl group having 7-20 carbon atoms, or R1 and R2 are combined with each other to form a part of a ring structure having 3-20 ring members, said ring structure being formed together with carbon atoms to which the R1 and R2 moieties are bonded, excluding the cases where the R1 and R2 moieties are hydrogen atoms, hydroxy groups or a combination of a hydrogen atom and a hydroxy group.